Allicdata Part #: | IRF540ZLPBF-ND |
Manufacturer Part#: |
IRF540ZLPBF |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 36A TO-262 |
More Detail: | N-Channel 100V 36A (Tc) 92W (Tc) Through Hole TO-2... |
DataSheet: | IRF540ZLPBF Datasheet/PDF |
Quantity: | 557 |
1 +: | $ 0.91350 |
10 +: | $ 0.80829 |
100 +: | $ 0.63901 |
500 +: | $ 0.49556 |
1000 +: | $ 0.39123 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 92W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 26.5 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF540ZLPBF transistor is a Field Effect Transistor (FET). It is a single, non-polar N-channel transistor designed to support high speed switching and power management applications. The IRF540ZLPBF is a low-power, low-threshold FET, capable of dissipating up to 30 watts of power. It can operate at up to 175C junction temperature and is ideal for applications requiring high switching speed, low gate charge and fast turn-off.
The IRF540ZLPBF has low gate input capacitance, which is advantageous for high-speed switching applications. This FET has a low gate-charge characteristic, which means it can be switched faster than traditional power FETs.
The IRF540ZLPBF is primarily used in high power applications where high switching speed and low switching losses are required. Examples include switch-mode power supplies, power converters, motor controls, and DC-to-DC switching converters. It is also used in high-voltage and high-current DC motors, power distribution equipment and analog amplifiers. The FET can be used in applications with operating voltages up to 100V and current ratings up to 30A.
The working principle of the IRF540ZLPBF is based on the fact that the magnitude of the voltage between source and drain (Vds) is controlled by the voltage applied between the gate and source (Vgs). When Vgs is positive (positive gate voltage), the electrons will be attracted to the surface of the transistor, forming an inversion layer. The inversion layer acts as a conductive channel between the source and drain, enabling current flow when the Vds voltage is above a certain value (known as the "threshold voltage").
The IRF540ZLPBF is a popular transistor for high-speed applications requiring a low threshold voltage and low switching losses. The FET is also used in high-voltage and high-current DC motor applications. The typical performance parameters of this transistor are current through drain (Ids) of 30A, operating voltage (Vds) up to 100V, and on-resistance (Rds) ranging from 0.3 ohm to 0.4 ohm.
In conclusion, the IRF540ZLPBF is a low-power, low-threshold FET with low gate input capacitance and fast switching speed. It is primarily used in high power applications requiring low switching losses. The FET has a typical current rating of 30A, operating voltage of up to 100V, and on-resistance of 0.3 to 0.4 ohm. The working principle of the IRF540ZLPBF is based on the ability to control the magnitude of Vds by applying a positive Vgs voltage, which creates an inversion layer enabling current flow when Vds is above a certain value.
The specific data is subject to PDF, and the above content is for reference
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