IRF5851TR

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The IRF5851TR is a power field-effect transistor (FET) array. Manufactured by International Rectifier Corporation, this device is specifically designed for use in power management and control applications. The IRF5851TR can be used in both linear and switching power applications. It is ideal for controlling the power flow in motor drives, power amplifiers, and other power conversion devices.

The IRF5851TR consists of two power FETs, one N-channel and one P-channel FET, in a single package. Each FET has a common gate terminal, source and drain. The two FETs are connected in parallel, with the source of the N-channel FET being connected to the source of the P-channel FET and the drain of the N-channel FET being connected to the drain of the P-channel FET. This ensures that the IRF5851TR has a low on-resistance and low gate charge. It also allows for high speed switching and low power dissipation.

The IRF5851TR has a drain-source breakdown voltage of 100V and can handle up to 50A of continuous drain current. The FET array is designed to operate over a temperature range of -55°C to +150°C. The on-resistance of the FET array is typically 4.8mΩ with a maximum gate charge of 20nC. It also has a low input capacitance of 13.5pF.

The IRF5851TR can be used in a variety of power management applications. It can be used to control the power flow in motor drives, power amplifiers, and other power conversion devices. It is also suitable for use in linear and switching power applications. The IRF5851TR can also be used to control the output of a switching regulator or provide voltage level shifting. Additionally, the IRF5851TR can be used in DC/DC converters, switch-mode power supplies, and other converters.

The working principle of the IRF5851TR is based on the drain-source voltage controlling the drain-source current. When the gate-source voltage is increased, the drain-source voltage allows more current to flow through the FET array. When the gate-source voltage is decreased, the drain-source voltage reduces the number of electrons that can flow between the drain and the source, reducing the amount of current that flows. The FET array also has a high input capacitance, which helps to protect the device from high voltage spikes.

The IRF5851TR is a power FET array that is ideal for power management and control applications. It features low on-resistance and low gate charge properties, making it suitable for power conversion and motor drive control applications. Additionally, the device has a drain-source breakdown voltage of 100V and can handle up to 50A of continuous drain current. With its low input capacitance, the IRF5851TR can also be used for voltage level shifting and DC/DC converter applications.

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