
Allicdata Part #: | IRF510SPBF-ND |
Manufacturer Part#: |
IRF510SPBF |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A D2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 100 |
1 +: | $ 1.04000 |
10 +: | $ 1.00880 |
100 +: | $ 0.98800 |
1000 +: | $ 0.96720 |
10000 +: | $ 0.93600 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF510SPBF transistors are a type of field effect transistor, also referred to as a MOSFET. The FET family of semiconductors is used in a wide range of applications and each type in the series can provide its own advantages. The IRF510SPBF transistor belongs to the N-channel enhancement-mode MOSFETs, allowing a high current flow with minimal switching times - this makes them useful in high-frequency control circuits and systems. They also have low gate-source voltages and low threshold voltage, making them suitable for use in automotive and industrial applications.
The IRF510SPBF transistor has an industry-standard 2-pin dual in-line package (DIP). This allows it to be used in a wide variety of applications, as it can easily be connected to boards and other electrical circuits. The device has an optimized structure, which brings lower on-state resistance that results in higher efficiency. Additionally, it offers improved avalanche and dv/dt capability for robustness during operation and a high degree of reliability.
The main characteristic of all FET transistors is that current flows from the source to the drain when a voltage is applied to the gate. This is referred to as the depletion mode FET, in contrast to the enhancement mode FET which requires a reverse voltage applied to the gate in order to turn the current on and off. The IRF510SPBF is an enhancement mode FET, meaning that the current flow can be controlled by the amount of voltage applied to the gate. When the gate voltage is increased, the current flow will increase. When the gate voltage is decreased, the current flow is reduced.
The construction of the IF510SPBF transistor is made of an insulated gate which is created by a layer of an oxidized semi-conductive material, usually silicon. The insulated gate acts as the switch in the FET transistor. When a charge is applied to the gate, it creates an electric field which changes the shape and size of the conducting channel between the source and the drain. When the charge is removed, the conducting channel changes back to its original state and the transistor is no longer conducting.
IRF510SPBF transistors are most commonly used in power supply circuits as they are able to handle large currents with minimal power losses. They are also widely used in high-frequency applications, such as being a switching element in radio receivers and amplifiers. In computer logic circuits, they can be used to control the logic level of the input and output, allowing logic gate and flip flop circuits to be built. Due to its low switching times, the IRF510SPBF is ideal for digital to analog converter circuits.
The IRF510SPBF transistor is a versatile and reliable device which can be used in a variety of applications. Its low gate-source voltage and low threshold voltage make it ideal for automotive and industrial applications, while its optimized structure and simplified package makes it a great choice for board-level electronics. Its ability to handle high currents with minimal power losses has steadily made it a popular choice for power supply circuits and its fast switching time enables it to be used in high-frequency applications.
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