Allicdata Part #: | IRF510STRR-ND |
Manufacturer Part#: |
IRF510STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A D2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa... |
DataSheet: | IRF510STRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF510 is a kind of power MOSFET which belongs to the FETs category. It is available in a number of different package types, including TO-220, TO-252 and DPAK, and can be used for a wide range of applications. The IRF510 is an N-channel enhancement MOSFET, which means that it can be used to control the flow of a high current with a low-current input signal. This makes it ideal for many switching and amplifying applications.
In terms of its application field, the IRF510 is often used in amplifier circuits, motor control circuits, power supply circuits, converters and motor drivers. Due to its high current carrying capacity and low on-resistance, the IRF510 is particularly useful for high-power applications. One important advantage of the IRF510 is that it can be used with both AC and DC currents and voltages, making it suitable for a variety of applications.
The working principle of the IRF510 is based on the principle of an N-channel enhancement MOSFET. When an external signal is applied to the MOSFET’s gate, the electrons in the N-channel will be repelled away from the Drain electrode and attracted to the Source electrode. This allows current to flow from the Source to the Drain. By varying the voltage applied to the gate, the amount of current that can flow from the Source to the Drain can be controlled. The result is a highly efficient and effective way to switch large currents on and off.
The IRF510 is a powerful and versatile transistor that can be used in a wide range of applications. It is capable of handling high current and offers a low on-resistance, making it suitable for many high-power applications. With its ability to handle both AC and DC currents, the IRF510 is an ideal choice for a variety of amplifier, motor control and power supply circuits. Its simple and efficient working principle makes it an easy to understand and use device, and its wide availability in a range of package types means that it can easily be tailored to meet the requirements of many different types of application.
The specific data is subject to PDF, and the above content is for reference
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