IRF540N_R4942

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1220pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	79nC @ 20V
Series:	--
Rds On (Max) @ Id, Vgs:	40 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF540N_R4942 is a common type of field-effect transistor (FET) that is widely used in a variety of application fields. It is a single n-channel power MOSFET that offers superior performance for a wide range of circuits and systems.In general, FETs are used to control current flow in a circuit. They achieve this by regulating the voltage between two connected terminals. In the case of the IRF540N_R4942, the transistor contains a source terminal, a gate terminal, and a drain terminal. When the applied voltage to the gate is above the threshold voltage, the source and drain terminals form a conductive path, allowing current to flow.The IRF540N_R4942 is a power MOSFET, which means it can handle high voltages and currents. It is commonly used when higher levels of power are required, such as in circuits that involve switching large currents. This type of transistor is used in applications such as power supplies, motor speed control, and amplifiers.The IRF540N_R4942 can handle up to 500volts of drain-to-source voltage at a drain current of up to 47A. It has an on-resistance of about 494mOhm and can handle currents up to 37A at 10V. It also features a maximum continuous drain-source diode rating of 500V at 1.4A and a maximum power dissipation of 66W. The IRF540N_R4942 is also relatively easy to use. It requires a gate-source voltage of around 3-8V, which makes it suitable for a variety of applications. It also has a low gate charge and a low input capacitance, which means it can quickly respond to changes in the input voltage. In addition to its ability to handle large voltages and currents, the IRF540N_R4942 also has a low on-state resistance. This means it has a low power loss when in operation, making it more efficient than other types of FETs. It also exhibits low thermal resistance, which helps to reduce the amount of heat generated when the device is in use. The IRF540N_R4942 is a great choice for many applications, thanks to its wide range of features and benefits. Its combination of high power handling, low on-state resistance, and low capacitance makes it a great choice for applications that require high levels of current, such as motor control and power supplies. It also has a low heat dissipation rate and can quickly respond to changes in input voltage, making it a great choice for many other applications as well.Overall, the IRF540N_R4942 is a reliable and efficient type of FET that can handle a wide range of applications. Its combination of high current handling and low on-state resistance makes it ideal for many power-related projects. Its low gate charge and low input capacitance also make it easy to use and relatively fast to respond to input voltage changes. Its low thermal resistance also helps to reduce heat generated when the device is in use.

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