| Allicdata Part #: | IRF5802-ND |
| Manufacturer Part#: |
IRF5802 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 900MA 6TSOP |
| More Detail: | N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Mi... |
| DataSheet: | IRF5802 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | Micro6™(TSOP-6) |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 88pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 540mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF5802 is a device widely used in power electric field. It has low on-state resistance and and is suitable for many kinds of applications. This article will mainly discuss Several applications and working principles of the IRF5802.
Applications
IRF5802 is widely used in various kinds of applications. In power electronic field, it is mainly used in DC/DC converters, solar inverter and battery charger. Apart from that, it is also used in the lighting ballast, battery charger, and solar cell. With its low on-state resistance, high efficiency, low total conduction losses and low thermal resistance, the device is suitable for driving high-power dissipative loads.
Besides power electronic field, IRF5802 is also suitable for use in load switches. This device features low control current, toggle frequency, and on-off time. As a result, it is suitable for automotive systems, such as driving motor and security systems, which require low power consumption and faster switching speed.
IRF5802 Working Principle
The IRF5802 operating principle is based on the MOSFET structure. It has three terminals, which is Gate, Source, and Drain. The current flow can be controlled by applying a source voltage to Gate. When the Gate voltage is greater than the threshold voltage, the device is switched on, and the current flows from Source to Drain.
In addition, the IRF5802 has two built-in electrostatic protection structures. First, the high voltage internal zener diode provides ESD protection to the Gate terminal. Secondly, the internal diode helps prevent the Gate-Source voltage from exceeding the drain-source voltage.
Finally, the IRF5802 has an integrated semiconductor temperature sensor. This temperature sensor is connected to the Source terminal. It is used to detect the temperature of the device. The output of the sensor is used to better protect the device from over-temperature and improve its efficiency.
Conclusion
In conclusion, the IRF5802 is a power MOSFET device with low on-state resistance and high efficiency. It is commonly used in various applications such as DC/DC converters, solar inverter, and battery charger. Its working principle is based on the MOSFET structure and it features integrated temperature sensor and electrostatic protection structures. With its versatility and low power consumption, the IRF5802 is an ideal solution for many power electronic designs.
The specific data is subject to PDF, and the above content is for reference
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IRF5802 Datasheet/PDF