Allicdata Part #: | IRF5305L-ND |
Manufacturer Part#: |
IRF5305L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 31A TO-262 |
More Detail: | P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Throug... |
DataSheet: | IRF5305L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF5305L is a Field Effect Transistor (FET) designed for high power applications. It is a part of the popular IRF family of MOSFETs, making it suitable for a wide range of applications requiring high-speed switch or analog operation. It is a single-channel device with an integrated power device, allowing for high current density and low on-resistance.
The IRF5305L is an enhancement mode device which uses metal-oxide-semiconductor technology to switch large currents. It has an active gate, which controls the current flowing between the source and drain. This FET is capable of operating at high voltage and can dissipate substantial amounts of power.
In order to ensure the proper operation of the IRF5305L, the gate must be fully charged. To achieve this, a very small gate-source voltage must be applied to the device. The gate can be driven by a wide range of signals, such as DC voltage sources, AC voltages, or even by PWM signals. Once the gate is charged, it takes only a small amount of current to maintain the charge.
The IRF5305L is capable of providing very fast switching speeds when operated with properly designed gate drivers and drains. Its high speed, coupled with its low on-resistance, makes it ideal for a wide range of applications. Low-impedance load switching and DC load switching can both benefit from the device’s high speed characteristics. It is also useful in high speed communications networks, such as Ethernet and Fibre Channel.
The IRF5305L is also capable of providing high efficiency as a result of its low on-resistance and high-frequency operation. It is often used in switch-mode power supplies, in which it can provide a high level of efficiency. The device is also suitable for use in high-temperature and high-power applications, as it is rated for operation at temperatures up to 150°C.
In summary, the IRF5305L is a versatile FET designed for high power applications. Its ability to provide high-speed switching, low on-resistance, and high-temperature operation make it suitable for applications ranging from high-speed communications networks to switch-mode power supplies. While more advanced MOSFETs might be available, the IRF5305L provides a good balance between cost and performance, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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