IRF530N_R4942

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Rds On (Max) @ Id, Vgs:	64 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	790pF @ 25V
FET Feature:	--
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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IRF530N_R4942 is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is an extremely versatile type of transistor, and offers a degree of functionality that is sometimes difficult to achieve with other types of transistors. In this article, we will discuss the application field and working principle of the IRF530N_R4942.The IRF530N_R4942 is a relatively low-cost, low-power, low-noise MOSFET transistor with a dual N-Channel configuration. It is designed to meet the needs of many different types of power application field, including automotive, telecom, consumer, and industrial applications. The low-power design of the IRF530N_R4942 makes it ideal for use in battery-operated systems, as it can limit power draw and improve efficiency.The IRF530N_R4942 is a linear type of MOSFET. This means that it can be used for both enhancing and depletion mode operation. It is capable of switching between these two modes at different frequencies. This allows it to be used as an amplifier, modulator, or voltage level shifter. The IRF530N_R4942 can also be used in other types of switch-mode applications such as logic level converters and unipolar gate drivers.When the IRF530N_R4942 is in its most simplistic form, it is composed of three elements; source, drain, and gate. The source and drain are responsible for transporting electrons back and forth, while the gate is responsible for controlling the flow of these electrons in either an "on" or "off" state. When a voltage is applied to the gate, the source and drain open, allowing current to flow through the MOSFET in two different directions. The exact behavior of the IRF530N_R4942 is determined by different physical characteristics. Each transistor has a certain amount of resistance, parasitic capacitance and input capacitance. All of these characteristics can be adjusted by changing the size or shape of the MOSFET. This allows engineers to design transistors that have optimized performance for specific applications.The IRF530N_R4942 has a low ON resistance, typically between 20 mΩ and 60 mΩ, and a rated voltage of 100 V. This makes it suitable for use as a power switch, or in high current applications. The device is also very efficient, as it has a low gate input capacitance and generates a low amount of heat, making it an excellent choice for applications that are energy-conscious.Overall, the IRF530N_R4942 is a fairly versatile single MOSFET transistor. It can be used in a wide range of applications, from power switches and level shifters to modulators and amplifiers. Its low noise performance and low ON resistance make it an excellent choice for battery-operated systems, while its small size and low cost make it a popular choice for applications where size and cost are a factor.

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