Allicdata Part #: | IRF7103QTRPBFCT-ND |
Manufacturer Part#: |
IRF7103QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 50V 3A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 3A 2.4W Surfac... |
DataSheet: | IRF7103QTRPBF Datasheet/PDF |
Quantity: | 1000 |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 255pF @ 25V |
Power - Max: | 2.4W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | IRF7103QPBF |
Series: | HEXFET® |
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IRF7103QTRPBF is a field effect transistor, also known as an array, a type of transistor commonly used in electronic components. It is also a type of MOSFET, or metal oxide semiconductor field effect transistor. As an array, it works as a series of transistors in parallel, forming a larger circuit that can either amplify or switch signals. This makes it ideal for use in applications that require either high current or high speed.
In terms of its structure, it is a simplified form of the common 3-pin n-channel MOSFET, consisting of a source, a gate, and a drain. The source and drain terminals are usually used for connecting with other components, such as other transistors, resistors, and other electrical components, to form more complex circuits. The gate serves to control the flow of current from the source to the drain, either enabling or preventing the current from passing.
In terms of its application field, these transistors find use in a wide range of endeavors. Commonly, they are used in applications that require high-current power, such as power amplifiers, power supplies, and motor control circuits. They are also used in analog switches and level shifting circuits, as well as signal signal processing, such as the conversions of signals from one type to another, and signal generation. Furthermore, they may also be used in radio frequency (RF) designs, as well as in audio circuits.
Regarding its working principle, the array of transistors forms a sort of potential divider. When a potential difference is applied across the source and drain terminals, the amount of current that passes through the array depends on the resistance of each individual transistor. This means that the current can be regulated by changing the resistance of the transistors, which can be done by being varying the voltage applied to the gate. The higher the voltage, the lower the resulting resistance, and thus the higher the current.
In conclusion, the IRF7103QTRPBF is an array of transistors which has application in a wide range of fields. It can be used to either amplifies or switch signals, as well as regulate current. Its working principle lies in its acting as a potential divider, with the amount of current passing through depending on the resistance of the individual transistors, which in turn can be regulated by varying the voltage applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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