IRF7473TRPBF

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IRF7473TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a package type of PAK (Plastic Amorphous-Keramik). A MOSFET is a transistor composed of three terminals - the source, the drain and the gate - which control the flow of power in the device. The IRF7473TRPBF is based on the latest vertical DMOS (double-diffused metal-oxide-semiconductor) process technology, and its applications field includes power management, motor control, and voltage regulator.

The IRF7473TRPBF offers superior switching performance, low resistance, and low capacitance. The device has a drain current rating of 15V, a drain-source voltage of 20V, an on-state resistance RDS (ON) of 0.019 Ω and a maximum power dissipation of 3.5W. It is designed to operate in temperatures ranging from -55°C to +150°C and is suitable for high-side and low-side switch applications, where high power (>3.5W) switching performance is required.

The working principle of the IRF7473TRPBF is based on the metal-oxide-semiconductor (MOS) transistor. A MOS transistor is composed of two terminals (called the source and the gate) and a gate dielectric layer. The source is connected to a voltage source, while the gate is connected to a control voltage. When the control voltage is applied to the gate, it produces an electric field that attracts electrons from the source. These electrons form an inversion layer at the gate dielectric and conduct current between the source and the gate, thus allowing the MOS transistor to act as an amplifier.

The IRF7473TRPBF is a PFET (P-channel Field Effect Transistor). It consists of two terminals, the drain and the source. When a positive voltage is applied to the source and a positive voltage to the drain, electrons are attracted from the source to the drain, and current flows from the source to the drain. This is the ON state of the device. When the control voltage is applied to the gate, the electrons are repelled and the MOS transistor acts as a switch, turning OFF current flow. In this way, the IRF7473TRPBF can be used to control the flow of power in a circuit.

The IRF7473TRPBF is an excellent choice for applications that require high power switching performance, such as motor control, voltage regulation, and power management. It offers low on-state resistance, low capacitance, and a wide temperature range. With its features and advanced process technology, the IRF7473TRPBF is a reliable and efficient power MOSFET.

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