Allicdata Part #: | IRF7704GTRPBFTR-ND |
Manufacturer Part#: |
IRF7704GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 40V 4.6A 8-TSSOP |
More Detail: | P-Channel 40V 4.6A (Ta) 1.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7704GTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
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The IRF7704GTRPBF is a Transistors-FETs, MOSFETs-Single transistor device commonly used in a wide variety of applications. It is a 60V, single N-channel MOSFET, with a drain current of 76A and a static Rds of 0.0022 Ohm. This versatile transistor device is available in a Leadless SMD (Surface Mount Device) package.
The IRF7704GTRPBF is primarily used as a switch due to its highly efficient ON/OFF capability, it is designed for maximum performance in minimum space. This makes it ideal for applications such as DC-DC converters, low voltage power management applications, portable equipment, chargers, and audio amplifiers. This transistor is also suitable for other applications such as high speed diodes and voltage regulators.
The working principle of the IRF7704GTRPBF is based on the fact that it is an N-channel MOSFET, which basically means that electrons can pass through the MOSFET when a voltage is applied to its gate. The unique structure of the MOSFET makes it so that it\'s turn on/off capabilities are much higher compared to a traditional transistor. This allows it to switch faster and often with almost negligible losses.
When a voltage is applied to the gate of the IRF7704GTRPBF, it begins to conduct current by allowing electrons to travel from the drain to the source, this is known as the saturation region. When the gate voltage drops below the threshold voltage, the MOSFET stops conducting current and the device is said to have entered the cut-off mode.
The IRF7704GTRPBF is a popular choice for applications that require high switching speed and low power consumption. This combined with its low cost and easy to use design makes it ideal for a wide variety of applications. It is often used in low voltage switching circuits such as DC-DC converters, power management applications, and audio amplifiers. It can be used as a simple switch to turn on or off any device with an appropriate voltage level.
The specific data is subject to PDF, and the above content is for reference
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