Allicdata Part #: | IRF710-ND |
Manufacturer Part#: |
IRF710 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 2A TO-220AB |
More Detail: | N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-22... |
DataSheet: | IRF710 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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IRF710 is a high voltage and high current, N-Channel enhancement-mode, insulated gate field-effect power transistor manufactured by IRF (International Rectifier). This MOSFET is best suited for use in applications such as switching regulators, DC-DC converters, inverters, power amplifiers, battery chargers, motor control circuits, and general purpose switch-mode power supply circuits.
The IRF710 is mainly consists of four elements, namely a gate, a source, a drain and a substrate. The gate is a metal gate constructed on a gate oxide. The gate is responsible for controlling and switching the current flow between source and drain. The source is a connected to the negative voltage and acts as the current source whereas the drain is connected to the positive voltage and behaves like a current drain.
The working principle of the IRF710 involves the application of an external voltage to the gate which increases or decreases the resistance between the source and drain. The resistance is increased when a negative voltage is applied to the gate (so called negative gate-source voltage) and this is referred to as the OFF state. In this state, no current flows between the source and the drain. When a positive voltage is applied to the gate, the resistance between the source and drain decreases and this is referred to as the ON state. In this state, the current flows between the source and the drain.
The IRF710 can be used in various applications, such as switching circuits, power controllers, high frequency converters, battery chargers, and motor control circuits. It is also used in voltage regulation circuits, audio amplifiers and DC-DC power converters. In addition, this MOSFET can be used in high power switching applications, as its input capacitance is relatively low and its maximum drain-source voltage (VDS) is up to 400 volts. It is also relatively tolerant of overvoltages, and its on resistance (RDSON) is low.
The IRF710 is a great device to have in one’s portfolio when looking for the right MOSFET to use in an application. It offers a wide range of voltage, current and power ratings, is tolerant of overvoltages, and offers a high ON-state stability. What’s more, its switching speed is relatively fast and it is relatively cheap as compared to its other counterparts.
The specific data is subject to PDF, and the above content is for reference
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