IRF730APBF

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	400V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 25V
FET Feature:	--
Power Dissipation (Max):	74W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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IRF730APBF Application Field and Working PrincipleThe IRF730APBF is an N-channel MOSFET transistor developed by the Infineon Technologies Corporation. This transistor is designed for switching applications where fast switching times and low on-resistance are required. It is typically used in applications that require reliable operation at high voltages and high currents.In general, MOSFETs (also called metal-oxide-semiconductor field-effect transistors) are electronic devices that are used to amplify or switch electronic signals. They are advantageous over other transistor types, such as BJTs, because they require less current to turn the switch on and off.The IRF730APBF is a specific type of MOSFET called an N-channel MOSFET. This type of transistor is so called because it is constructed from an N-type material. Specifically, it is constructed from an N-type Silicon wafer, which is used for its electrically conductive properties. The basic construction of an N-channel MOSFET consists of a source, a gate, and a drain.The source and drain are the two terminals of the transistor. The source is where the current flows into the transistor and the drain is where it leaves. The gate is the terminal that controls the flow of current into the transistor. The gate is connected to a voltage source, and depending on the voltage applied to the gate, the transistor can be switched on or off.The IRF730APBF is a specialized MOSFET designed to operate at high voltage and current levels. The on-resistance of the device is extremely low, allowing it to switch quickly and efficiently with minimal power loss. The device is often used in high-power switching applications, such as in automotive and industrial circuitry.In addition to its low on-resistance, the IRF730APBF has a high break-down voltage. This is the voltage at which the transistor stops conducting and begins to break down. The higher the voltage of the device, the more robust it is and the more reliable it is at high currents.The IRF730APBF is a robust and reliable transistor that can be used in many different applications. It can be used to switch signals between devices or to amplify signals. Its low on-resistance and high breakdown voltage make it ideal for use in high-power switching applications.In summary, the IRF730APBF is an N-channel MOSFET transistor developed by Infineon Technologies Corporation. It is designed for switching applications where fast switching times and low on-resistance are required. It has a low on-resistance and a high breakdown voltage, making it robust and reliable for high-power switching applications. It is suitable for use in automotive, industrial, and other high-power circuits.

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