Allicdata Part #: | IRF7521D1TRPBF-ND |
Manufacturer Part#: |
IRF7521D1TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 2.4A MICRO8 |
More Detail: | N-Channel 20V 2.4A (Ta) 1.3W (Ta) Surface Mount Mi... |
DataSheet: | IRF7521D1TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | FETKY™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 15V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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IRF7521D1TRPBF is a type of field effect transistor (FET) belonging to a family of single MOSFETs (metal oxide semiconductor field-effect transistors). It is commonly used in power semiconductor applications in various industries including automotive, telecommunication, and computer systems.
The device is a relatively large power MOSFET featuring a low-on-resistance, low gate charge, and low gate-to-drain charge. It is highly efficient in dissipating power and is capable of conducting large currents for an extended period of time. The device also has excellent thermal characteristics and can operate reliably up to a rated breakdown voltage of 175V.
The IRF7521D1TRPBF can be used for many types of applications like power switching, motor control, and power management. It can be used to drive high currents up to 75 Amps, and can also act as an efficient switch to deliver power to loads. Additionally, since it is a true single FET, it is an excellent choice for applications that require high frequency switching.
The working principle of the IRF7521D1TRPBF relies on the intrinsic characteristics of metal-oxide semiconductor field-effect transistors. Gate-to-drain capacitance is impacted by changes in the gate voltage, which affects the current that flows across the device, and this current is used to control the voltage at the drain. Depending on the type of application, the gate-to-drain capacitance can be either increased or decreased, providing flexibility for different types of applications.
Furthermore, MOSFETs can also act as low-impedance switches and this is one of the reasons why it is suitable for high-power and high-frequency applications. MOSFET switches are able to provide a very low off-state impedance, eliminating the need for an additional switching device or circuit. This makes them an ideal choice for applications where efficiency is important.
In conclusion, the IRF7521D1TRPBF is a highly sought-after single MOSFET due to its excellent thermal characteristics and low on-resistance. It is capable of withstanding large currents while at the same time providing reliable power management and high frequency switching. The device is suitable for power switching, motor control, and power management, making it a great choice for various industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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