Allicdata Part #: | IRF7526D1PBF-ND |
Manufacturer Part#: |
IRF7526D1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 2A MICRO8 |
More Detail: | P-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount Mic... |
DataSheet: | IRF7526D1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FETKY™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1.25W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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IRF7526D1PBF is a type of metal oxide semiconductor field-effect transistor (MOSFET). It is designed as a low on-resistance, single N-channel enhancement mode MOSFET. It is typically used in systems which require fast switching and low gate-drive power. The IRF7526D1PBF is a N-channel MOSFET available in surface mount I-PAK package with optimum performance and low RDSon.
The working principle of the IRF7526D1PBF is based on the MOSFET technology. The IRF7526D1PBF is a type of transistor composed of a source, a drain, and a gate. The transistor works to control the current flow between the source and the drain by the application of a voltage to the gate. When a voltage is applied to the gate, it will cause the transistor to turn on and let current flow between the source and the drain. When the voltage is removed from the gate, the transistor shuts off and no current can flow.
The IRF7526D1PBF is designed to be used in a wide range of applications. It is particularly well suited for use in switching power supplies, motor control, and other power management applications. It is also used in high frequency operations such as radio frequency switching. It can also be used in amplifier circuits because of its low on-resistance, allowing less loss of power. The exceptional low gate charge makes it suitable for applications requiring fast switching.
The IRF7526D1PBF is designed to have low gate capacitance, making it suitable for applications which require fast transition time. It can also handle up to 25A continuous current, and has a low thermal resistance to ensure its performance remains stable in different conditions. The high power handling is provided by its low RDSon and high voltage rating.
The IRF7526D1PBF has a wide range of features which make it a versatile and reliable choice for a variety of applications. Its low on-resistance, low gate charge, and fast switching make it ideal for use in high-frequency circuits, and its robust power handling makes it suitable for use in power management applications. The IRF7526D1PBF is also an excellent choice for amplifier circuits thanks to its low power losses.
The specific data is subject to PDF, and the above content is for reference
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