Allicdata Part #: | IRF720SPBF-ND |
Manufacturer Part#: |
IRF720SPBF |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 3.3A D2PAK |
More Detail: | N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | IRF720SPBF Datasheet/PDF |
Quantity: | 758 |
1 +: | $ 1.21590 |
10 +: | $ 1.07541 |
100 +: | $ 0.85006 |
500 +: | $ 0.65923 |
1000 +: | $ 0.52044 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRF720SPBF is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is the first to use new Super Power FET Technology. The IRF720SPBF MOSFET provides improved performance and reliability with the smallest size, best RDS(ON), and highest power density. It is ideal for applications that require high current, high-frequency switching and low RDS(ON).
The IRF720SPBF MOSFET has excellent channel on-resistance (RDS(ON)). It also provides excellent switching performance, with a low threshold voltage and high current handling capability. Furthermore, the device has a low-capacitance design that optimizes switching performance. The small size and low power consumption make the IRF720SPBF MOSFET an ideal choice for many high current switching applications.
The IRF720SPBF MOSFET is designed to operate in applications requiring high speed switching. The wide range of operating voltages, from 4V to 12V, make the device suitable for use in a variety of applications. In addition, the device is designed for low power consumption, allowing for optimum power efficiency. The IRF720SPBF is also immune to latch-up, making it more reliable in applications that require high current switching.
Applications that require robustness and reliability can benefit from the use of the IRF720SPBF MOSFET. It is especially suited for use in high current switching applications such as motor control, DC/DC converters, power converters, and other power management systems. The device is also used in motor drives, power inverters, and automotive electronics. In addition, its low on-resistance helps reduce power consumption and heat generation in systems.
The working principle of the IRF720SPBF MOSFET is relatively simple. It operates by allowing current to flow through the channel of the device when enough voltage is applied to its gate. The gate voltage is needed to move electrons from the source to the drain, allowing current to flow from the drain to the source. This current flow is then used to control the flow of electricity in the circuit.
The IRF720SPBF MOSFET is a reliable and powerful choice for a variety of high current switching applications. Its high RDS(ON) and low threshold voltage provide excellent performance and robustness in many different conditions. The device is also designed for low power consumption, making it an ideal choice for power-sensitive applications. With its small size and excellent switch performance, the IRF720SPBF MOSFET is an ideal choice for many high current switching applications.
The specific data is subject to PDF, and the above content is for reference
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