IRF7478QTRPBF Discrete Semiconductor Products

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IRF7478QTRPBF is a field effect transistor (FET) that is commonly used in a variety of applications. The device is a single FET and can be used as a switched amplifier, voltage regulator, and MOSFET driver. Although most FETs are designed for analog applications, the IRF7478QTRPBF is ideal for digital applications.

The IRF7478QTRPBF is a low-voltage and high-current horizontal FET. It is designed for maximum switching performance, low threshold voltage and fast rise time. The device can handle up to 250V and has an RDS(ON) of 0.065-ohm. Its power rating is 93W at 100°C.

The IRF7478QTRPBF has a high-speed Gate charge up to 1.1-ohm, high-frequency operation up to 10MHz and low ESR. This combination makes it suitable for applications such as PFC, high-efficiency PSUs, half-bridge and full-bridge DC/DC converters and other high-power switch circuits. In addition to its electrical properties, it also has a low-dissipation package, which is important in a variety of applications.

When it comes to design, the IRF7478QTRPBF has an advanced trench package process which drastically improves the performance of the device. The package features a low-dissipation housing which makes it ideal for high heat-oriented applications. The dV/dt capability is also enhanced by the advanced package technology, allowing for fast switching and higher power levels.

The IRF7478QTRPBF is a vertical FET with an n-channel active region. It is designed with a dielectric layer which provides electrical insulation between layers of the FET. This reduces capacitance and helps reduce losses, resulting in higher efficiency. The FET also uses a drain-substrate voltage that is higher than that used in conventional FETs, which means it can switch more rapidly and handle more power.

The IRF7478QTRPBF is a high-speed switch and can switch up to 55A at 5V, making it ideal for higher voltage operation. Its RF shielding is also very good, making it suitable for RF circuit applications. Its low thermal resistance keeps it cool during operation and also prevents it from going into thermal runaway.

In summary, the IRF7478QTRPBF is a single FET designed for use in high-voltage, high-current and high-frequency applications. Its advanced trench package process reduces capacitance and increases efficiency. The device has a low threshold voltage, low ESR, fast gate charge and a high dV/dt capability. Its low thermal resistance and RF shielding also make it suitable for RF circuit applications.

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