Allicdata Part #: | IRF7705GTRPBFTR-ND |
Manufacturer Part#: |
IRF7705GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 8A 8-TSSOP |
More Detail: | P-Channel 30V 8A (Ta) 1.5W (Ta) Surface Mount 8-TS... |
DataSheet: | IRF7705GTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2774pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
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IRF7705GTRPBF is an N-channel Enhancement Mode Power MOSFET specifically designed for applications such as load switching and DC-DC converters and offers one of the LOWEST ON-Resistance. Irf7705gtrpbf has been designed for low-voltage, high-current applications such as load switching and DC-DC converters. The thermal electrodes are on the bottom of the package so the thermal resistance from the die to the outside of the package is minimized.
IRF7705GTRPBF operation requires a gate voltage of 12 V, although it may be driven at lower voltages. When the gate-source voltage (VGS) exceeds 12 V the FET turns completely on and works with low gate drive. As the VGS decreases, the drain current decreases until it becomes extremely low when the VGS reaches 5 V. This FET also has a high maximum drain-source voltage, which is typically listed on the product package as 26 V.
The IRF7705GTRPBF’s low on-resistance and low gate-drive power make it ideal for applications where higher power is required, such as motor control and industrial applications. The low on-resistance of this device also allows it to be used in applications that require switching very large currents. This device’s fast switching speed also allows it to be used in more sophisticated applications, such as in power electronics. This device also is suitable for applications that require some noise suppression due to the low gate-source capacitance.
IRF7705GTRPBF works by modulating the conductivity between two terminals, source and drain. The conductivity between the two terminals is controlled by the voltage applied to the gate terminal, and the flow of electrons is regulated. This type of transistor, known as an enhancement-mode MOSFET, must have a certain minimum gate-source voltage (VGS) for conduction to occur, and the current flow is controlled by varying this voltage. This type of transistor features low on-state resistance, making it suitable for applications requiring high switching speed and low losses.
The IRF7705GTRPBF’s principal applications are in digital logic circuits, switch-mode power supplies, UPS systems, motor controls, and other low voltage, high current applications. Its main advantages are low on-resistance and fast switching speeds. This device is also used in many other circuit designs, including power amplifiers and motor drivers.
IRF7705GTRPBF is a versatile device capable of supporting a wide variety of applications. It is an ideal choice for applications that require low on-resistance and low gate drive power. It can also be used in applications that require noise suppression due to its low gate-source capacitance. Its fast switching speed and low on-resistance make it ideal for load switching, motor control, and power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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