IRF7706GTRPBF Allicdata Electronics
Allicdata Part #:

IRF7706GTRPBFTR-ND

Manufacturer Part#:

IRF7706GTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 7A 8-TSSOP
More Detail: P-Channel 30V 7A (Ta) 1.51W (Ta) Surface Mount 8-T...
DataSheet: IRF7706GTRPBF datasheetIRF7706GTRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.51W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7706GTRPBF is a 75V, N−Channel Power MOSFET with a rated output of 28A. It belongs to the Transistors - FETs, MOSFETs - Single family and is a highly efficient electronic switch used for building high–current, low-voltage circuits.

Due to its high voltage and current ratings, the IRF7706GTRPBF is a popular device for a wide range of consumer, industrial, and commercial applications. These include power converters, telecommunications equipment, switching power supplies, variable-speed motor controls, and point-of-load converters.

The IRF7706GTRPBF consists of a drain–source connection consisting of an N–channel MOSFET. It is constructed using extrusion–thermal technique and high–speed transistors. The device has a gate-source threshold voltage of 3 to 4V, giving it excellent control characteristics as well as low gate capacitance.

The device has very low RDS(on) at typical low gate drive voltages, allowing it to be used with moderate gate drive levels. This lowers switching losses and increases utilization of the available power supply. This results in improved efficiency and more compact designs.

To operate the IRF7706GTRPBF, an external power source is required. This can either be a single-ended or a dual–ended voltage source. In the single–ended configuration, the source is usually connected to the drain. In the dual–ended configuration, the source and drain are connected to the opposite ends of the power source.

For the device to function properly, it requires a certain gate-voltage rise time or fall time. This is controlled by the resistance of the current sense resistor and the capacitance of the gate capacitance. The two components must be properly sized to ensure proper switching operation.

In addition to sourcing current, the IRF7706GTRPBF can also be used to sink current. This can be done by applying a negative voltage to the gate which causes the device to switch off. The maximum drain-source current rating of the device is 28A.

The IRF7706GTRPBF is designed for use in a variety of applications. Its low power consumption, high–speed switching capability, and low gate capacitance make it ideal for use in high–current, low-voltage circuits. Its use in consumer, industrial, and commercial applications is widespread as it provides both reliability and performance.

The specific data is subject to PDF, and the above content is for reference

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