IRF7855TRPBF Allicdata Electronics
Allicdata Part #:

IRF7855TRPBFTR-ND

Manufacturer Part#:

IRF7855TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 12A 8-SOIC
More Detail: N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7855TRPBF datasheetIRF7855TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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IRF7855TRPBF is a single high voltage N-Channel MOSFET (metal oxide semiconductor field effect transistor) that is used to control high power in a variety of electronic applications. It features low on-resistance, high operating temperature, and high power dissipation. It is also known to be robust and reliable. The IRF7855TRPBF is often used in applications such as power supplies, motor control, power amplifiers, converters and rectifiers, consumer electronics, industrial machinery and other motor control applications.

The MOSFET is the most common type of field effect transistor (FET). It consists of a semiconductor layer of metal oxide sandwiched between two electrodes. In the MOSFET, a voltage applied between the gate and the source determines the degree to which current can flow between the drain and the source. This is known as the ‘gate-source’ voltage. When the gate-source voltage is low, current cannot flow; when the gate-source voltage is high, current can flow.

The IRF7855TRPBF is designed to be a versatile, high-performance MOSFET. It has a low on-resistance of 0.068 Ohms and a maximum voltage of 500V. This allows for quick and efficient switching of higher power signals, improving power efficiency in applications such as motor control and power supplies. It also has a maximum power dissipation of 80W and a high operating temperature up to 175°C, meaning it can withstand higher temperatures without any damage to the device.

The IRF7855TRPBF is a versatile MOSFET that can also be used in a variety of other applications. It can be used as a power switch in DC power supplies and as a level shifter in digital logic circuits. It can also be used as an inverter or to interface high voltage signals with low voltage logic signals. Furthermore, the device can be used to build robust high-power circuits in audio and video applications.

The working principle of the IRF7855TRPBF MOSFET is simple. When a voltage is applied to the gate, it controls the flow of current between the drain and the source. The higher the voltage, the greater the current that is allowed to flow. This makes the IRF7855TRPBF an ideal choice for controlling high power signals. The device can be used in a variety of applications, making it an important component in a wide range of electronic systems.

The specific data is subject to PDF, and the above content is for reference

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