Allicdata Part #: | IRF7342D2TRPBFCT-ND |
Manufacturer Part#: |
IRF7342D2TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 3.4A 8-SOIC |
More Detail: | P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | IRF7342D2TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | FETKY™ |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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IRF7342D2TRPBF is one of the most popular transistors in the field of FETs and MOSFETs. It is a single MOSFET transistor that is used in a wide variety of devices and applications. The IRF7342D2TRPBF is designed to be used in both DC and AC circuits, and can operate from a wide voltage range. It is a power MOSFET transistor with a maximum power rating of 50W.
The main features of the IRF7342D2TRPBF are its high efficiency, low on-resistance, and fast switching times. The low on-resistance ensures that it is capable of delivering more power at higher frequencies. The transistor also has a high capacitance and a low gate threshold, which makes it suitable for fast switching and frequency operations. The fast switching times make the IRF7342D2TRPBF an ideal choice for high-performance applications.
One of the main applications of the IRF7342D2TRPBF is in high-speed logic circuits. It is used in logic and control circuits,such as logic-level drivers, motor control and switching regulators. In addition, it is used in high-power amplification designs, and in voltage and current limiting circuits. The IRF7342D2TRPBF is also used in high-power RF and microwave circuits, such as power amplifiers, power-combining networks, and switching circuits.
The working principle of the IRF7342D2TRPBF is similar to other MOSFET transistors. It consists of a source, drain, and gate electrode connected to a n-channel MOSFET. The voltage applied to the gate controls the current between the source and drain. When a voltage is applied to the gate, it attracts electrons from the source to the channel and creates a conductive path between the source and drain. By controlling the voltage at the gate, the amount of current that can pass through the transistor can be controlled.
The IRF7342D2TRPBF is a robust and reliable transistor, and it can operate in temperatures up to 200°C. It is a low-cost transistor, and it is widely used in a variety of applications. The IRF7342D2TRPBF provides high-speed logic and power conversion capability, making it an ideal choice for high-performance systems.
The specific data is subject to PDF, and the above content is for reference
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