Allicdata Part #: | IRF7452PBFTR-ND |
Manufacturer Part#: |
IRF7452TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 4.5A 8-SOIC |
More Detail: | N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | IRF7452TRPBF Datasheet/PDF |
Quantity: | 4000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The IRF7452TRPBF is a high-end switch mode power MOSFET technology, designed for low-cost, high-efficiency, and small form factor applications. It is a type of insulated gate bipolar transistor or IGBT that is most commonly used in applications such as automotive, electronics, industrial, and medical applications. The IRF7452TRPBF is a unique type of MOSFET that works as a switch and is commonly used as a power switch in industrial and automotive applications.
The main characteristics of the IRF7452TRPBF are its fast switching capabilities, ease of implementation, and low power dissipation. The IRF7452TRPBF is capable of switching loads at frequencies up to 200 kHz and features a maximum drain-source voltage of 450 V as well as a maximum drain-source current of 30 A. This MOSFET is also designed to be easily assembly with central mount technology and requires a minimum PCB space.
In order to understand the working principle of the IRF7452TRPBF, we must first look at how a MOSFET works. MOSFETs are transistors constructed on a very thin layer of semiconductor material that can act as either an insulator or a conductor depending on its voltage. When the voltage applied between the gate and the source is relatively low, the MOSFET acts as an insulator, thus preventing the current flow.
However, when a voltage above a certain threshold is applied between the gate and the source, the MOSFET begins to act as a conductor, thus allowing current to flow. This process is commonly referred to as the "turn-on" process. To turn off the MOSFET, the voltage between the gate and the source must be dropped below this threshold.
The IRF7452TRPBF is designed to offer high efficiency and low power dissipation. In order to achieve this, the MOSFET uses a unique technology called the IGBT or insulated gate bipolar transistor. An IGBT is an special kind of MOSFET that contains a small amount of insulation between the gate and the source, thus allowing the MOSFET to operate at a much higher power and switching frequency than a normal MOSFET.
In addition to its high-efficiency and low power dissipation, the IRF7452TRPBF also offers advantages in its implementation and assembly. This MOSFET can be easily mounted with central mount technology and requires a minimum sized PCB space for its implementation. This makes the IRF7452TRPBF an ideal choice for applications that require fast switching at high reliability and power.
The IRF7452TRPBF is one of the most widely used MOSFETs in the world. It is widely used for applications such as automotive, electronics, industrial, and medical applications where high efficiency and low power dissipation are important. The IRF7452TRPBF is also widely used as a switch in non-automotive applications and is commonly used as a power switch in industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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