Allicdata Part #: | IRF7738L2TRPBFTR-ND |
Manufacturer Part#: |
IRF7738L2TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 35A DIRECTFET |
More Detail: | N-Channel 40V 35A (Ta), 184A (Tc) 3.3W (Ta), 94W (... |
DataSheet: | IRF7738L2TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 184A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 109A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 194nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7471pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.3W (Ta), 94W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET L6 |
Package / Case: | DirectFET™ Isometric L6 |
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IRF7738L2TRPBF is a N-Channel power MOSFET that belongs to the IRF77XX family. It has on-state drain-source resistor which helps to manage the power dissipation. Manufactured by Infineon Technologies AG, the device has V(BR)(DSS) and I(D)SM ratings of 30V and 180A respectively.
This device is typically used in applications such as switching regulators, converters, high-voltage inverters and high-current motor controlling, where very high voltage and current switching becomes necessary. In addition, it can also be used in LED lighting, industrial subsystems, and other commercial applications.
The IRF7738L2TRPBF has a maximum drain-source voltage of 30V, a drain current of 180A, and a maximum drain-source on-state resistance of 0.9mΩ. It can handle power levels of up to 540W and operate in temperatures ranging from -55℃ to +175℃. In addition, it features a lead-free, halogen-free construction that helps to reduce energy consumption, and thus contributes to a greener environment.
In terms of its working principle, the device is designed to function as a voltage-controlled MOSFET in that it allows a relatively low voltage (signal) to control a high current (load). The gate region is even more important than the source and drain regions in this configuration, as controlling the voltage at the gate allows the current at the source to be regulated. Since the gate is insulated from the source and drain, the resulting circuit needs very few components than those that would be needed for a bipolar junction transistor.
Moreover, IRF7738L2TRPBF is an enhancement-mode MOSFET, meaning that an adequate negative gate voltage is required to open channels between the source and the drain. This also means that the device can be turned off completely by removing the gate voltage, making for efficient power dissipation. In summary, this device is ideal for applications requiring efficient power switching under high voltages and currents, since it offers very low on-state resistance and high voltage and current ratings.
The specific data is subject to PDF, and the above content is for reference
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