Allicdata Part #: | IRF7105QTRPBFCT-ND |
Manufacturer Part#: |
IRF7105QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 25V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Sur... |
DataSheet: | IRF7105QTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | IRF7105QPBF |
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IRF7105QTRPBF is a series of power MOSFETs made by Reliance Electric and designed for use in high power applications. It is a P-Channel Enhancement Mode Power MOSFET, which contains two separate P-Channel MOSFETs connected in parallel and is designed for applications where high continuous drain-source current and voltage ratings are required.
The IRF7105QTRPBF is constructed with a standard 3-pin TO-247 package. It enables a unique combination of low on-resistance (RDS(ON)) at 4V VGS and high current capability. This enhancement power MOSFET is pulse tested with low gate charge and a fast switching speed. Additionally, the device has improved avalanche energy rating and lower noise.
IRF7105QTRPBF power MOSFETs are suitable for a wide range of applications in various industries, such as power supply and battery chargers, UPS, inverters, LED drivers, LED displays, automotive, audio and low voltage DC/DC converters. Additionally, it can also be used for switching circuits, motor control and high-frequency applications.
The working principle of the IRF7105QTRPBF power MOSFET is simple yet effective. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts the negative carriers from the source to the semiconductor material located between the source and drain. When enough current is attracted to the gate, the drain voltage begins to lower, thereby allowing a current to flow from the source to the drain.
When the voltage at the gate is removed, the electric field is no longer attracting the carriers, and the MOSFET reverts back to the off state, thus cutting off the current flow. This is the basic working principle of the power MOSFET.
In conclusion, IRF7105QTRPBF power MOSFETs are a series of devices suited for use in a variety of high power applications, such as automotive, audio, LED drivers and DC/DC converters. The device\'s working principle is based on the principles of the MOSFET, which allows for a fast and reliable current flow when voltage is applied to the gate. As such, the IRF7105QTRPBF power MOSFET is an effective and reliable component for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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