IRF7309QTRPBF Allicdata Electronics
Allicdata Part #:

IRF7309QTRPBFCT-ND

Manufacturer Part#:

IRF7309QTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 4A, 3A 1.4W Surfa...
DataSheet: IRF7309QTRPBF datasheetIRF7309QTRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: IRF7309QPBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The IRF7309QTRPBF is a quad low-side driver array designed specifically to enhance the accuracy, power efficiency and output ESD protection of power supplies and microcontrollers. It is an array of four low-side MOSFETs and is part of the IR Transistor Array series. This array meets the requirements set forth by the International Rectifier standard, as stated in their part number code.

This device is designed to control the current and voltage between load and source in a low-side current driver application. It has a high Rds(on) value so it can provide better current control than single MOSFET applications. It also offers high ESD protection for added safety. This device can be used in applications such as dc-to-dc converters, portable electronic products, automotive and industrial applications, as well as other electronic systems which require an efficient high speed switching device.

The IRF7309QTRPBF also features an excellent feature set including a wide operating temperature range (up to 125°C), low gate charge and low on resistance. These features make it an ideal choice for designs requiring an efficient, small form-factor solution. The low gate charge also allows for faster switching, reducing switching time and improving efficiency.

When it comes to the working principle of the IRF7309QTRPBF, it starts with the gate, which acts as an electric field controlling the current flowing between the source and drain terminals. The gate voltage determines the resistance of the channel between source and drain, effectively regulating the flow of current. This is achieved by varying the level of electric field created by the gate voltage, effectively modulating the current through the MOSFET array. Thus, the output voltage and current are regulated based on the gate voltage level.

In terms of protection, the IRF7309QTRPBF uses a unique and advanced ESD protection mechanism. This design uses a special internal resistor and associated circuitry, to dissipate any ESD current that may be present on the external pins. This ensures that the device can adequately handle ESD pulses of up to 20 kV without affecting its electrical characteristics, making it suitable for motors, pumps and other heavy-duty, long-life applications.

Overall, the IRF7309QTRPBF is an efficient and reliable low-side driver array which offers outstanding control, power efficiency and ESD protection. Its wide operating temperature range and low gate charge make it the ideal choice for any application which requires an efficient, small form factor solution. Its advanced ESD protection also enables it to handle ESD pulses of up to 20 kV, making it suitable for motors, pumps and other heavy-duty applications. This product is sure to meet the needs of any application where speed, efficiency and robustness of operation are paramount.

The specific data is subject to PDF, and the above content is for reference

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