Allicdata Part #: | IRF7316GTRPBFTR-ND |
Manufacturer Part#: |
IRF7316GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 30V 4.9A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 4.9A 2W Surfac... |
DataSheet: | IRF7316GTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7316GPBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF7316GTRPBF is a robust, versatile and cost-effective performer among transistors, specifically FETs (field-effect transistors) and MOSFETs (metal-oxide semiconductor field effect transistors) arrays. The part is available from most major electronic component suppliers and offers an impressive array of features to enable a wide range of applications.
The IRF7316GTRPBF is an N-type dual gate MOSFET operating in the 30V to 50V range. Maximum gate-source voltage of the part is 30V and its drain-source voltage rating is 30V as well (V GDTV ).Its gate-drain breakdown voltage (V GBR ) is 100V typical and its pre-avalanche drain specifying current (I DS(QP) ) is 320mA. The part’s maximum drain-source on-state resistance (R DS(ON) ) is 700mΩ and its maximum drain current is 250mA.
This part is additionally rated for a power dissipation (P D ) of 600mW, an operating temperature range (T J ) of -55C to 175C, and a gate capacitance (C GDS ) of 4pF. The part has a maximum junction temperature (T J ) of 175C, a maximum operating leakage current (I GSS ) of 250nA, and a maximum reverse transfer capacitance (C RSS ) of 100pF.
The main application field for this part are cellular phones, laptops, computers, and other electronics related products and can be used in applications involving power switching and control. It is also used to control and regulate low-noise audio signals, as well as high-speed switching logic elements.
The working principle behind this part is fairly simple, as it is based on a dual gate MOSFET structure. In a basic dual gate MOSFET, the parameters of the device are determined by applying a voltage difference between the two gates, which controls the threshold voltage at which current will flow through the device. The dual gate MOSFET structure of the IRF7316GTRPBF allows for greater control and versatility in controlling power switching and other regulating applications.
The IRF7316GTRPBF is an ideal choice for a variety of power switching and control applications. Its versatile construction allows for greater control and accuracy, and its robust package allows for greater reliability in harsh environments. The 600mW dissipation rating makes it ideal for high-power applications, while the low leakage current ensures that it can be used in low-noise audio applications as well. With its impressive array of features and superior performance, the IRF7316GTRPBF is an ideal choice for a variety of power switching and control applications.
The specific data is subject to PDF, and the above content is for reference
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