Allicdata Part #: | IRF7316QTRPBFCT-ND |
Manufacturer Part#: |
IRF7316QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 30V 4.9A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 4.9A 2W Surfac... |
DataSheet: | IRF7316QTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7316QPBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRF7316QTRPBF is a three channel N-Channel Enhancement Mode Field Effect Transistor (FET) Array. The array features two independent sources and three drains. It is an ideal device for applications such as analog switches, general purpose switching and controlling current in actuating high power devices. The IRF7316QTRPBF has a drain to source voltage rating of 60 V and a drain current of 14.5 A.
The IRF7316QTRPBF is a high performance N-Channel Power MOSFET array which has been designed for use in the development of high power, high current, analog and switching applications. The array has two independent sources per transistor and three drains. The device features a single package which makes it an ideal solution for applications where space is at a premium.
The key features of the IRF7316QTRPBF include a drain source voltage of 60 V, a maximum drain current of 14.5 A, a maximum junction temperature of 175°C, a breakdown voltage of 12 V and an operating temperature range of 55°C to +175°C. The device also has a low gate to source capacitance of 10pF, a low gate to drain capacitance of 3nF and a fast reverse recovery time of 150ns.
The main application field of the IRF7316QTRPBF are analog switches, high power devices, power converters, power amplifiers and general purpose switching. This device is suitable for applications requiring high power and high current, such as motor control, solar inverters, and power supplies.
The working principle of the IRF7316QTRPBF is relatively simple: it is a three-channel transistor array that uses two independent sources to apply a voltage or current to a high current device from a single package. The array consists of two N-type MOSFETs, which when combined can act as a single-device switch for high current applications. The two MOSFETs are connected in series, with the source connected to ground, and the drains connected to an external circuit. The voltage or current applied to the external circuit is determined by the voltage or current applied to the sources. When the voltage of the source is increased, it will result in an increase in the current flowing through the drains and to the external circuit.
The IRF7316QTRPBF is available in an 8-pin, surface-mount package and provides an ideal device for high-performance, high-current, analog, and switching applications. Its small package size, easy to use design, and high performance make it an ideal choice for developers looking to improve their designs.
The specific data is subject to PDF, and the above content is for reference
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