| Allicdata Part #: | IRF7341QTRPBFCT-ND |
| Manufacturer Part#: |
IRF7341QTRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 55V 5.1A 8-SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surf... |
| DataSheet: |  IRF7341QTRPBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Base Part Number: | IRF7341QPBF |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power - Max: | 2.4W |
| Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.1A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A |
| Drain to Source Voltage (Vdss): | 55V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
Description
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.Introduction
P-Channel MOSFET is a type of transistor used in many different applications. The IRF7341QTRPBF is one such MOSFET, manufactured by International Rectifier. It is an integrated circuit device, containing multiple P-Channel devices, each with an independent gate. In this article we will look into the application field and working principle of the IRF7341QTRPBF.Application Field of IRF7341QTRPBF
The IRF7341QTRPBF is used in many different applications, most of which involve digital electronics. The list of applications includes:- Switching circuits
- Lighting fixtures
- Industrial controllers
- Computer peripherals
- Automotive components
- Sensors and detectors
- Logic gates
- Actuators
- Power supplies
- Motor controls
Working Principle of IRF7341QTRPBF
Like other transistors, the IRF7341QTRPBF has three terminals: the source, gate, and drain. When voltage is applied to the gate, it creates a channel between the source and the drain. This channel can be used to control the flow of current from the source to the drain. The amount of current that can flow through the channel is determined by the gate voltage.When the gate voltage is high, it creates a large channel, allowing maximum current flow. When the gate voltage is low, it creates a small channel, allowing minimal current flow. As the gate voltage is changed, the channel size is changed and the current flowing from the source to the drain is also changed.Conclusion
The IRF7341QTRPBF is a type of P-Channel MOSFET, which is used in many different applications. This device has excellent drive capability, fast switching speeds, and low on-state drain-source resistance, making it suitable for a variety of applications. The working principle of the IRF7341QTRPBF is that the gate voltage determines the size of the channel between the source and the drain, which in turn determines the amount of current that can flow.The specific data is subject to PDF, and the above content is for reference
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