IRF7379TR

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The IRF7379TR is a three-phase power MOSFET array designed for use in a wide range of high-current switching applications. It has a maximum continuous drain current of 40A and a maximum drain-source voltage capability of 70V, allowing it to safely handle relatively high power levels. In addition, the array has an onboard temperature-sensing circuit that monitors the die temperature and can trigger an over-temperature protection (OTP) system if necessary.

The IRF7379TR consists of three N-channel MOSFETs integrated into a single package, providing an easy-to-use solution for applications requiring multiple FETs. Each of the MOSFETs has a dedicated source, gate and drain pin, and all three pins are internally connected together to create a single, three-phase power array. This eliminates the need for the user to manually connect the source and gate pins of the individual MOSFETs.

The IRF7379TR’s main application area is as a three-phase power switching device. It is typically used in multi-phase motor drives, such as those found in industrial robots, as well as other high-current, high-power switching applications. The array is also commonly used as a power semiconductor device in power supply circuits, and can be used to control the power flow in an H-bridge circuit.

The IRF7379TR’s working principle is based on the well-known principle of MOSFETs. A MOSFET is an insulated-gate field-effect transistor (IGFET), which is a type of transistor used to control voltage and current by using the capacitive-coupled electric field between its gate and source terminals. The IRF7379TR integrates three N-channel MOSFETs into a single package, allowing them to be used as a single switching device. The three MOSFETs are connected in parallel, so their combined current rating is equal to the current rating of a single MOSFET multiplied by three.

The IRF7379TR’s gate pins are connected together internally, so a single control signal can be used to activate the array. When a pulse of electrical energy is applied to the gate pin, it will cause a voltage shift in the gate-source threshold voltage, which will result in a current flow through the drain of the MOSFETs. This current flow is then amplified by the load, resulting in a high-current output. The integrated OTP circuit monitors the die temperature and can prevent the array from being damaged by overcurrent conditions by triggering an OTP system if necessary.

The IRF7379TR is an ideal choice for power switching applications that require high current and power capabilities, as well as robust protection features. It is a very versatile device, and its wide range of applications make it an invaluable component in many industrial and consumer applications. Overall, the IRF7379TR is a great all-around choice for anyone looking for an effective and reliable power switching solution.

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