Allicdata Part #: | IRF7379PBFTR-ND |
Manufacturer Part#: |
IRF7379TRPBF |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 30V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W S... |
DataSheet: | IRF7379TRPBF Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.24950 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7379PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 5.8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A, 4.3A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF7379TRPBF is a type of Insulated Gate Bipolar Transistor (IGBT) package. It is one of the rapidly growing areas in transistor technology. This device has a few unique features, such as fast switching, low on-state resistance, low gate charge, and high current-handling capability. As such, this IGBT is well-suited for a variety of high-power applications. In this article, we discuss the application fields and working principles of the IRF7379TRPBF.
Applications
This IGBT package can be used in a wide range of applications. For example, it is an ideal choice for power converters and inverters. Due to its high current-handling capability and fast switching speed, it can be used for controlling large motors, AC-DC and DC-AC power stages, and induction heating systems. Additionally, it can be used for high-power amplifiers and pulse-width modulated (PWM) switching applications. This device can also be used in automotive, industrial, and telecom applications.
In addition to the above-mentioned applications, the IRF7379TRPBF can also be used in motor control and signal conditioning circuits. It can also be used in power supplies, in power factor correction circuits, and in harmonic filtering circuits. Moreover, it can be used in resonant converters and active filters. This IGBT package is an ideal choice for power supplies and inverters used in LED lighting and other industrial applications.
Working principle
The IRF7379TRPBF is a type of IGBT, which is a combination of insulated gate and Bipolar Transistor (BJT). This package has an IGBT construction consisting of an N-channel MOSFET and a PNP BJT. When a voltage is applied to the gate, current flows from the p-type region to the n-type region, creating an inversion layer. This inversion layer creates an electrically conductive channel between the collector and emitter of the BJT, thus allowing current to flow. The current flow is controlled by adjusting the voltage applied to the gate.
Another unique feature of the IRF7379TRPBF is its ability to handle large currents and fast switching speeds. This is due to its low on-state resistance and high speed gate-drive capabilities. The device also comes with an integrated avalanche diode and an overvoltage protection circuit, which further enhances its performance and reliability. Due to these features, the IRF7379TRPBF is an ideal choice for a variety of high-power applications.
Conclusion
In conclusion, the IRF7379TRPBF is an IGBT transistor package with a few unique features, such as fast switching speeds, low on-state resistance, low gate charge and high current handling capability. It is an ideal choice for a variety of high-power applications, such as power converters and inverters, motor control, signal conditioning circuits, power factor correction circuits, harmonic filtering circuits and resonant converters. The IRF7379TRPBF offers high functionality, reliability, and performance, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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