IRF7504TRPBF

Vgs(th) (Max) @ Id:	700mV @ 250µA
Base Part Number:	IRF7504PBF
Supplier Device Package:	Micro8™
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.25W
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	8.2nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	270 mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.7A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRF7504TRPBF is an integrated circuit (IC) which utilizes the advanced technology of field-effect transistors (FET) to provide advanced performance characteristics for various power management applications. The FETs in this IC are combined into a single array, making circuit design and implementation much easier than utilizing individual components. This article will cover the application fields of the IRF7504TRPBF and its working principle.

Application Fields

The IRF7504TRPBF is a dual N-channel, enhancement MOSFET array. This type of array is ideally suited for load switching and power management applications, which require the precise control of high currents and voltages. In particular, the IRF7504TRPBF is often used in power management applications such as motor control, power conversion, variable speed drive systems, solar inverters, and other high power switching applications. Additionally, the IRF7504TRPBF has built-in protection circuitry, which makes it particularly useful for applications that need to ensure a high level of protection against overcurrent, overvoltage and thermal runaway conditions.

Working Principle

The IRF7504TRPBF is a dual N-channel MOSFET array, which means that the IC contains two identical, parallel FETs. Each FET is combined into the same package, allowing for faster and more efficient circuit designs. The way it works is by using the input voltage (Vin) to control the gate voltage, thus controlling the channel current (Ich) between the source and drain of the FET. When the gate voltage is high, the channel current is completely off. When the gate voltage is low, the channel current is completely on. This allows for precise control of the channel current, ensuring that the load is powered properly and efficiently.

Conclusion

The IRF7504TRPBF is a powerful and versatile IC which combines the advantages of an array of FETs into a single package. Its advanced technology and efficient design make it ideal for a variety of load switching and power management applications, such as motor control, power conversion, variable speed drive systems and solar inverters. Additionally, the built-in protection circuitry ensures a high level of safety, making it an even more attractive choice for power management applications.

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