IRF7755GTRPBF

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Base Part Number:	IRF7755GPBF
Supplier Device Package:	8-TSSOP
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1W
Input Capacitance (Ciss) (Max) @ Vds:	1090pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	51 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.9A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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IRF7755GTRPBF is a high current power field-effect transistor integrated with a N-channel enhance mode MOSFET, mainly used to switch or amplify electrical signals. It is widely used in many applications such as aerospace, automotive, computers, consumer electronics, telecommunications, process control, solar and wind energy. Its main advantage is that it provides power savings, scalability, and increased reliability compared to its predecessors.When compared to the conventional MOSFETs, the IRF7755GTRPBF has a more efficient structure which allows it to consume less power while still delivering high current. Additionally, its low on-state resistance (RDSON) helps reduce switching losses. This makes it an ideal choice for high-frequency applications such as small signal switching or power supply applications. Furthermore, the IRF7755GTRPBF has a fast switching speed, making it suitable for high-speed device applications.The IRF7755GTRPBF is a+termination field-effect transistor (FET) array that consists of four N-Channel Power MOSFETs in a single package. It includes a total of four FET channels, each with their own gate and drain connected to the circuit. This feature of the FET array enhances the functionality of the IRF7755GTRPBF, making it suitable for switching applications in different electrical circuit configurations. The IRF7755GTRPBF uses a Source-Drain-Source termination system, which helps reduce the parasitic inductances associated with FETs. The device also features an Enhanced-Source structure which improves the reliability of the FETs by increasing the voltage blocking capacity and thermal resistance. This FET array has a very low on-state resistance and is capable of supplying high currents up to 25A. In operation, the IRF7755GTRPBF is used to control the flow of current in a circuit by relying on a gate voltage. When the gate voltage is below a certain threshold, the FET is off and there will be no current allowed to flow through. Conversely, when the gate voltage exceeds a certain threshold, the FET is on and current is allowed to flow through. The higher the gate voltage, the larger the current allowed to flow.The IRF7755GTRPBF is easy to use and provides good performance in high power, high current applications. It can be used in many different applications such as power supplies, DC-DC converters, switching and power management systems, and any other application requiring reliable and efficient switching. The IRF7755GTRPBF is an ideal choice for applications requiring high power and high currents in a small footprint. Overall, the IRF7755GTRPBF is an excellent FET array suitable for a range of wireless and switching applications. It is capable of providing high current while consuming less power, significantly improving the operation of many electrical circuits. The IRF7755GTRPBF can be used to control the flow of current in many different applications, making it a popular choice for power and switching applications.

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