Allicdata Part #: | IRF820ASTRR-ND |
Manufacturer Part#: |
IRF820ASTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 2.5A D2PAK |
More Detail: | N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D2... |
DataSheet: | IRF820ASTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
IRF820ASTRR is a special field effect transistor (FET) of the single family. It is used in the fields of power electronic, signal analysis and amplifier. This article will examine the application field and working principle of IRF820ASTRR.
Application Field
The IRF820ASTRR belongs to the family of single FETs and has a drain-source voltage rating of 200V, a continuous drain current of 55A at a temperature of 25°C(77°F), making it suitable for many high-current applications. IRF820ASTRR can be used in power-conversion solutions such as high-end current converter, power supply, switch and DC-DC converter. In addition, it can also be used in sensor amplifier circuits, signal conditioning circuits, programmable logic controller(PLC) circuits, and control circuits.
Working Principle
IRF820ASTRR utilizes a basic principle of FETs in order to achieve its effective operation. This principle is the \'depletion mode substrate-doped FET\', which states that when the gate voltage is decreased, the current flowing through the device is increased. In the case of depletion-mode FETs, this means that the current flowing through the device increases rapidly, due to the fact that the FET is always \'on\'. This type of FET is also characterized by its low input capacitance, enabling it to obtain a high bandwidth and switch speeds.
Device Features
The IRF820ASTR (23/36V) offers many features, such as:
- Operating temperature range of -40°C to +125°C.
- Low gate charge of 2.63nC.
- High voltage tolerance of 23/36V.
- High output conductance of 0.1mS@25°C.
- Low junction capacitance of 150pF@25°C.
Conclusion
The IRF820ASTRR is an effective single-FET device for power electronics, signal analysis, and amplifier applications, owing to its high drain-source voltage rating, continuous drain-current rating at 25°C, and low gate charge. Additionally, it offers a low input capacitance, high voltage tolerance, and high output conductance that give it an advantage over other single-FET devices in similar applications.
The specific data is subject to PDF, and the above content is for reference
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