IRF8302MTR1PBF

Vgs(th) (Max) @ Id:	2.35V @ 150µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6030pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 190A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF8302MTR1PBF is an advanced power MOSFET designed using vertical DMOS technology. This power MOSFET is used as a switching element in a range of applications, from automotive to computers and appliances. In this article, we will take a look at the application field and working principle of the IRF8302MTR1PBF.
Application Field
The IRF8302MTR1PBF offers excellent switch performance with low on-resistance (RDS(on)) of 0.38Ω, high breakdown voltage of 500 V, and very low gate charge of 1.2 nC. This makes it suitable for use in high-frequency switching power supplies, variable speed motor and appliance control, and computer power supplies, lighting and automotive applications. In automotive applications, it can be used in power steering systems, power windows, and seat control. The device offers fast switching speed with reduced electromagnetic interference.
Working Principle
The IRF8302MTR1PBF is a single N-channel MOSFET. It is composed of a gate electrode, source, and drain electrodes. These electrodes are connected by a semiconductor channel and a very thin insulation layer. When voltage is applied to the gate, a positive charge is attracted to the gate, creating a conducting “inversion layer” between source and drain electrodes. This inversion layer provides a low resistance path between source and drain, allowing current to flow.The IRF8302MTR1PBF has a low gate threshold voltage of 4V, enabling the device to achieve full conduction at low gate voltage levels. This makes it suitable for applications where system efficiency and power savings are important. It also has a low power dissipation and generates very low EMI levels. The device also has a fast switching time and high current pulse handling capabilities. It has been designed with a maximum switching frequency of 1MHz and a maximum drain-source voltage of 500V, allowing it to be used in high-frequency switching power supplies. The device is also compatible with a wide range of logic families and can be used with CMOS, TTL and other logic levels.
In conclusion, the IRF8302MTR1PBF is an advanced MOSFET designed for high frequency switching applications. Its low gate charge, low RDS(on), and fast switching times make it suitable for a range of applications, from automotive to computers and appliances.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description