Allicdata Part #: | IRF820SPBF-ND |
Manufacturer Part#: |
IRF820SPBF |
Price: | $ 1.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 2.5A D2PAK |
More Detail: | N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | IRF820SPBF Datasheet/PDF |
Quantity: | 1125 |
1 +: | $ 1.25370 |
10 +: | $ 1.13400 |
100 +: | $ 0.91111 |
500 +: | $ 0.70861 |
1000 +: | $ 0.58714 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF820SPBF is a high performance and highly reliable N-channel MOSFET (metal oxide semiconductor field effect transistor) manufactured by Infineon. It has been designed to provide superior performance in a wide range of applications such as power and RF conversions as well as power electronics. The IRF820SPBF features a low gate threshold voltage, an excellent dV/dt capability, high RDS(on) and low gate charge, making it the ideal choice for a variety of applications.
The IRF820SPBF\'s simple structure is composed of three elements: source, gate and the drain. It is mainly used when a large voltage and current need to be switched across the drain and source by a much smaller signal on the gate.
The working principle of the IRF820SPBF involves the physical phenomenon of quantum tunneling. When a bias voltage is applied, electrons tunnel from the source region to the drain region via the insulating gate (channel) between them. This causes a change in current, which is the operating principle of the MOSFET. With an additional gate voltage, the characteristics of the MOSFET can be tuned accordingly.
The IRF820SPBF is typically used in a variety of applications, such as DC-DC converters, high current and high voltage switches, high frequency amplifiers, and radio-frequency (RF) power amplifiers. It can also be used in high power applications such as motor controllers, regenerative brakes and process control. Due to its low gate threshold voltage, high RDS(on) and low gate charge, it is a very important device for switching high current and high voltage applications.
The IRF820SPBF can also be used in power electronics. Power electronics are used to convert electrical energy from one form to another, such as inverters, which convert direct current (DC) to alternating current (AC), as well as static power supplies, which maintain a steady electrical output of a given voltage or current. The high control capacitance and low gate charge of the IRF820SPBF make it an ideal choice for maintaining precise control of switching in power electronics.
The IRF820SPBF is a sophisticated and reliable device, which has been extensively used in a number of applications. Its simple structure, high current handling capability and ruggedness make it an ideal choice for a variety of applications. It is also relatively inexpensive and widely available.
The specific data is subject to PDF, and the above content is for reference
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