IRF820AL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF820AL is a high-voltage, low-on-resistance type of N-channel Power MOSFET. It is commonly used in switching and linear applications. It is often used as a shunt regulator or pre-driver in industrial and consumer power supplies and electronic control systems.

This MOSFET is capable of operating at a maximum of 200V and 20A. It has a low on-resistance of 9.4mΩ and an on-resistance of 55mΩ. The breakdown voltage is also very high (650V). It has an excellent gate charge performance (<85nC) and is also low gate charge loss. This makes it an ideal choice for use in power supplies and switching applications.

The operating principle of a MOSFET is based on the electric field-effect transistor (FET). A FET is a three-terminal device consisting of source, gate, and drain terminals. The gate terminal is the control terminal that turns on and off the circuit. When a voltage is applied to the gate terminal of the FET, a strong electric field is created that attracts electrons to the source and drain. This creates a conducting path between source and drain.

The IRF820AL is an enhancement-type power MOSFET. It requires an applied voltage to the gate to create the required electric field and turn on the device. As the device is turned on, current will be able to flow from the drain to the source. The IRF820AL also has a maximum reverse drain-source voltage rating, making it ideal for applications such as flyback converters and power inverters.

The IRF820AL can be used in a variety of switching and linear applications, such as power supplies, motor control, AC-DC converters, DC-DC converters, switching regulators and motor drives. The device is suitable for use in a variety of applications where low-on-resistance and high-voltage switching is required. It is also widely used in industrial, automotive and consumer electronics applications.

The IRF820AL is a beneficial MOSFET that is not only highly efficient but also reliable and cost-effective. It is robust and can handle high-frequency operation, making it an ideal choice for applications requiring fast switching time. The device is also highly reliable and offers excellent performance, making it ideal for applications that require reliable and long operating life.

The specific data is subject to PDF, and the above content is for reference