IRF820ASPBF

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p> The IRF820ASPBF is a field-effect transistor (FET) from Infineon Technologies. It is a single-term metal-oxide-semiconductor FET (MOSFET), also known as a metal-oxide-metal transistor or a MOD-FET. This type of transistor has a metal gate electrode, a semiconductor substrate, and metal contact layers.</p><p> This device\'s power rating of 75 Volts makes it suitable for a variety of applications. Its features include a low on-resistance of 0.039 Ohms, high channel-to-drain breakdown voltage (BVDSS) of 75 Volts, low gate-to-drain capacitance (COSS), and low gate charge (QG). </p><p>The IRF820ASPBF is used in a variety of applications, including audio amplifiers and linear current-source drivers. It can be used as a Low side switch in flyback converters, in Forward converters, in Hot-swapping Power Supplies, in power over Ethernet (PoE) applications, and in motor Speed Control applications. </p><p> The working principle of the IRF820ASPBF is based on the principle of controlling a current flow through the transistor. The field-effect transistor (FET) is used as a switch or an amplifier, and its operation is based on a gate voltage that is used to modulate the current conduction of the device. The gate metal has a high electron affinity, so it is attracted to a negative gate voltage. This gate voltage modulates the channel between the source (source terminal) and the drain (drain terminal), allowing current to flow in the device. </p><p> When the gate voltage increases to a certain level, the channel is opened by a process called inversion, and the current flow is increased. This can be used to either switch the device on or off, or to adjust the amount of current that passes through the device. The gate voltage can also be used to adjust the Gain of the device, which is a measure of its amplification ability. </p><p> The main advantages of the IRF820ASPBF FET include a low on-resistance, high channel-to-drain breakdown voltage, low gate-to-drain capacitance, and low gate charge. These features make the transistor suitable for use in a wide variety of applications. </p><p> The IRF820ASPBF is an excellent choice for applications requiring a reliable and efficient transistor for current control applications. It can be used for a wide range of applications, including audio amplifiers, linear current-source drivers, flyback converters, Forward converters, Hot-swapping Power Supplies, power over Ethernet (PoE) applications, and motor Speed Control applications. </p>

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