IRF830ASPBF

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	620pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF830ASPBF Application Field and Working Principle

The IRF830ASPBF, a discrete semiconductor device of the Insulated Gate Bipolar Transistor (IGBT) family, is used to amplify and switch electronic signals. It is a general-purpose IGBT device with a high voltage capability, low on-state losses, and good short-circuit capability.The IRF830ASPBF is classified as a single IGBT, using a N-channel J-FET control device and a P-channel enhancement-mode FET logic output stage. This type of transistor device offers versatility and excellent building block for power switching circuits. It is typically used for high voltage, low-power switching applications such as in AC induction motors, electrical power supplies, telecom power modules and battery chargers.This device is designed to be used with standard 12 volt collectors, and is manufactured using chips that have been processed with photolithography and integrated circuit (IC) techniques. It has a wide range of applications, from controlling high voltage applications such as relay drivers, motor controllers and high voltage power supplies, to low voltage switching applications including LED light fixtures, LED drivers, and battery chargers.The IRF830ASPBF is made up of two distinct components – an N-channel junction field-effect transistor (JFET) and a P-channel enhancement-mode field-effect transistor (FET). The N-channel JFET is used a control device that reacts to an input signal, while the P-channel FET is used a logic output stage. These two devices interact with each other to form a complete switch circuit. The working of the IRF830ASPBF device is based on the concept of biasing. The N-channel JFET acts as the gate terminal of the FET device, while the P-channel FET serves as the source terminal. The current flow in the device is controlled by biasing the gate of the N-channel JFET. When a positive input signal is provided, the gate voltage increases, which in turn lowers the resistance of the N-channel FET, allowing current to flow through it. On the other hand, when a negative input signal is provided, the gate voltage decreases, increasing the resistance of the N-channel FET and blocking current flow through it. The device operates with a maximized turn-on time and a minimized turn-off time. The maximized turn-on time is needed because it removes any transient effects which can cause the device to shut down due to inadequate voltage. The minimized turn-off time is needed to ensure that the power is cut off to the load as quickly as possible, reducing the amount of power that can be dissipated in the device. The IRF830ASPBF also has a wide range of operating temperature. It is capable of handling temperatures between -55 and +175°C without loss of performance. It also has a thermal resistance rating of 3.2°C/W, allowing it to dissipate heat more easily than other types of FETs.Overall, the IRF830ASPBF is one of the most popular IGBT devices on the market. It has a wide range of applications, is capable of handling high temperatures, and is easy to use due to its low power requirements. Its efficient gate structure also allows for a fast and reliable switching action, making it an ideal choice for applications that require fast switching times.

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