Allicdata Part #: | IRF820LPBF-ND |
Manufacturer Part#: |
IRF820LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 2.5A TO-262 |
More Detail: | N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Throu... |
DataSheet: | IRF820LPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF820LPBF is a power MOSFET created by International Rectifier (IR), which specializes in the design and manufacturing of integrated circuits for the power management and for automotive, industrial, and computer markets. It is part of IR’s 500V MOSFET family, and provides low on-resistance, low gate charge and very fast switching. This device is ideal for applications such as switching power supplies, motor control, lighting drivers, and industrial power management circuits. It is also a good choice for applications that require a low-cost solution in a small package.
The IRF820LPBF is a Single Enhancement-mode Field Effect Transistor (FET) which operates by applying a voltage to the gate - called gate-to-source voltage - and current flows between the source and drain terminals, known as drain-to-source current. In enhancement FETs, the on-state resistance - also known as forward resistance - is decreased and increased by increasing the gate-to-source voltage and by decreasing the gate-to-source voltage, respectively. This is different from Depletion-mode FETs where the forward resistance increases with gate-to-source voltage, but it is constant with gate-to-source voltage in Enhancement-mode FETs.
The IRF820LPBF has a drain-to-source breakdown voltage rating of 500V, a maximum drain-to-source on-state resistance of 0.45Ω and gate-to-source threshold voltage rating of 2.4V. It has a maximum continuous source current of 40A and a maximum pulsed drain current of 420A. The gate-to-source capacitance is 1C (where C is the capacitance of electrons measured in farads). The device also has excellent thermal characteristics, with a heat spreader tied to the source to improve heat dissipation.
The IRF820LPBF is well-suited for a variety of applications including automotive, industrial, and computer sectors. It can be used in linear, switching and other power management applications where low on-state resistance and very fast switching capabilities are required. In the industrial sector, it is used in motor control, light drivers, and other power management applications. In the automotive sector, it is used in battery management, electric vehicle systems, and other applications requiring low-cost solutions in small packages.
In the computer sector, the IRF820LPBF is used in a variety of computer motherboards, including those used by Apple and Dell. It is also used in voltage regulator modules, which are used to convert a high input voltage to a constant output voltage. Other applications include switching power supplies, variable speed drives, and communications systems. In all of these applications, the device can provide low on-state resistance and fast switching, along with excellent thermal performance.
In summary, the IRF820LPBF is a power MOSFET manufactured by International Rectifier that has low on-resistance, low gate charge, and very fast switching. It is ideal for applications requiring a low-cost solution in a small package, such as those found in the automotive, industrial, and computer markets. This device has a drain-to-source breakdown voltage of 500V, gate-to-source threshold voltage of 2.4V and a maximum continuous source current of 40A. It also has excellent thermal characteristics, which make it a suitable choice for numerous applications.
The specific data is subject to PDF, and the above content is for reference
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