IRF8113GTRPBF Discrete Semiconductor Products

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IRF8113GTRPBF is a single N-channel enhancement mode Field Effect Transistor (FET) manufactured by International Rectifier Corporation. It is constructed with advanced MOSFET technology, offering high switching speed and low on-resistance. IRF8113GTRPBF is suitable for use in dc-dc and ac-dc converter applications where high-side switching is required. It has an advanced power MOSFET technology, with an ultra-low RDS(on) that enables maximum efficiency.

The IRF8113GTRPBF has a maximum voltage rating of 100V and a maximum drain current of 4A. It has an on resistance (RDS(on)) of only 0.53Ω with a drain-source voltage of 4.5V. This makes it ideal for use in applications that require low on-resistance and high switch speeds, such as dc-dc and ac-dc converters. It also has a low gate-source capacitance, allowing for fast switching times.

IRF8113GTRPBF is an enhancement mode FET, and so it is an "on" device when a gate voltage is applied to it. This gate voltage can be either positive or negative. When a positive gate voltage is applied, the channel resistance decreases and an electric current flows. Conversely, when a negative gate voltage is applied, the channel resistance increases and the electric current stops flowing. This makes it an ideal device for use in applications where a switch is required, such as in dc-dc and ac-dc converters.

In dc-dc and ac-dc converter applications, the IRF8113GTRPBF is used to control the power transfer from the power source to the load. It is placed in between the source and load, and the gate voltage is used to control the current flow. When the gate voltage is increased, the current increases and the power transfer is increased; conversely, when the gate voltage is decreased, the current decreases and the power transfer is decreased. This makes the FET an ideal device for use in these applications.

The IRF8113GTRPBF also has a very low gate-source capacitance, which allows for faster switching speeds. This is especially important in applications which require high speed switching, such as power electronic systems. Additionally, the FET has a very low output capacitance, which further helps to reduce noise and reduce power dissipation.

The IRF8113GTRPBF is a versatile FET that can be used in a variety of applications where a high-side switch is required. It is easy to use and can provide a reliable and efficient switching solution. Furthermore, its low RDS(on), high voltage ratings, and low gate-source capacitance make it suitable for high-speed switching applications.

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