IRF8301MTRPBF

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IRF8301MTRPBF is a 9A, 55V N-channel MOSFET from International Rectifier. It is designed for low voltage (≤ 5.5V) applications and utilizes the company\'s proprietary advanced HEXFET Power MOSFET technology. These power MOSFETs provide high power and low on-resistance capabilities with extremely low R_DS(on) and fast switching times.

The device is housed in an 8-pin mini-DIP package that is ideal for high density board designs and can be soldered directly onto a printed circuit board. Additionally, it has been tested to be compatible with standard soldering processes.

Features of the IRF8301MTRPBF include its low on-state resistance (R_DS(on)) at 0.007Ω, zero gate charge, and a low 10nC total gate charge with positive temperature coefficient for over-temperature protection.

Its applications include DC-DC converters, secondary side synchronous rectification, stepped-down rectifiers, level shifters, high-speed gate drivers, and low-side body diode replacement. Other applications of this MOSFET include highly efficient power conversion, lighting phase dimmers, DC power supplies, and power management solutions.

The IRF8301MTRPBF utilizes traditional MOSFET operating principles; when a voltage is applied to the gate of the device, this creates an electric field that modulates the current carriers in the conduction channel. This in turn allows the source current to flow from drain to source. The destination current varies depending on the voltage applied to the gate. At zero voltage, the source current is limited to the channel resistance; at greater voltages, the current is limited to the maximum current rating of the device.

The IRF8301MTRPBF\'s fast switching capabilities encountered in off-state will aid in achieving high efficiency and high power transfer due to its low R_DS(on). In addition, its low gate charge will minimize switching time and minimize switching loss.

This device includes protections against over-temperature, although this is implemented through a positive temperature coefficient on its total gate charge. This feature allows the drain-source voltage to rise slightly as the device heats up, in order to reduce the number of carriers that can flow through the channel, thus lowering its typical power dissipation. This helps to prevent the device from overheating.

In summary, the IRF8301MTRPBF is an N-channel MOSFET that is designed for low voltage applications. It provides 9 A current capability and 55 V breakdown voltage, with extremely low R_DS(on). Its fast switching and low gate charge capabilities allow for high power conversion with increased efficiency. The device is housed in a standard 8-pin mini-DIP package for easy PCB mounting and soldering. The IRF8301MTRPBF is suitable for DC-DC converters, lighting phase dimmers, and power management solutions.

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