| Allicdata Part #: | IRFP044NPBF-ND |
| Manufacturer Part#: |
IRFP044NPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 53A TO-247AC |
| More Detail: | N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-2... |
| DataSheet: |  IRFP044NPBF Datasheet/PDF |
| Quantity: | 3874 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 120W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 29A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The IRFP044NPBF is an N-channel MOSFET designed to be used in power switching circuits. It is commonly used in audio amplifiers, power supplies, and other high-current applications where excellent performance and reliability are required. The IRFP044NPBF offers several advantages over traditional solutions, including higher speed switching, lower RDS(on) values, and increased efficiency.
The IRFP044NPBF is an enhancement-mode MOSFET. When the gate voltage is raised above the source voltage, the device is in the “on” state and the drain current increases exponentially. Conversely, when the gate voltage is lowered, the device is “off” state and the drain current decreases rapidly. The drain current is proportional to the gate voltage and is controlled by the MOSFET’s transconductance parameter. The device also has an intrinsic body diode, which permits a reversed-biased current path for inductive charge/discharge applications.
The application field of the IRFP044NPBF lies in the domain of power switching. It is designed to provide superior performance in low-side and high-side switch circuits. The IRFP044NPBF is ideal for applications that require very fast switching speeds and high efficiency. It is also commonly used to control the power of LEDs, motors, and other power loads. The device offers very low RDS(on) values, making it suitable for high-current applications. The built-in intrinsic body diode makes it perfect for inductive switching.
In summary, the IRFP044NPBF is a power MOSFET used for switching applications. It features a high speed switching operation, low on-state resistance, and improved efficiency. It is great for controlling power devices such as motors, LEDs, and other load applications. Additionally, it offers a diode bridge for inductive charge/discharge applications. As such, the IRFP044NPBF is a reliable and efficient device for switched-mode power control applications.
The specific data is subject to PDF, and the above content is for reference
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