IRFP044NPBF Allicdata Electronics
Allicdata Part #:

IRFP044NPBF-ND

Manufacturer Part#:

IRFP044NPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 53A TO-247AC
More Detail: N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-2...
DataSheet: IRFP044NPBF datasheetIRFP044NPBF Datasheet/PDF
Quantity: 3874
Stock 3874Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IRFP044NPBF is an N-channel MOSFET designed to be used in power switching circuits. It is commonly used in audio amplifiers, power supplies, and other high-current applications where excellent performance and reliability are required. The IRFP044NPBF offers several advantages over traditional solutions, including higher speed switching, lower RDS(on) values, and increased efficiency.

The IRFP044NPBF is an enhancement-mode MOSFET. When the gate voltage is raised above the source voltage, the device is in the “on” state and the drain current increases exponentially. Conversely, when the gate voltage is lowered, the device is “off” state and the drain current decreases rapidly. The drain current is proportional to the gate voltage and is controlled by the MOSFET’s transconductance parameter. The device also has an intrinsic body diode, which permits a reversed-biased current path for inductive charge/discharge applications.

The application field of the IRFP044NPBF lies in the domain of power switching. It is designed to provide superior performance in low-side and high-side switch circuits. The IRFP044NPBF is ideal for applications that require very fast switching speeds and high efficiency. It is also commonly used to control the power of LEDs, motors, and other power loads. The device offers very low RDS(on) values, making it suitable for high-current applications. The built-in intrinsic body diode makes it perfect for inductive switching.

In summary, the IRFP044NPBF is a power MOSFET used for switching applications. It features a high speed switching operation, low on-state resistance, and improved efficiency. It is great for controlling power devices such as motors, LEDs, and other load applications. Additionally, it offers a diode bridge for inductive charge/discharge applications. As such, the IRFP044NPBF is a reliable and efficient device for switched-mode power control applications.

The specific data is subject to PDF, and the above content is for reference

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