Allicdata Part #: | IRFP4227PBF-ND |
Manufacturer Part#: |
IRFP4227PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 65A TO-247AC |
More Detail: | N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-... |
DataSheet: | IRFP4227PBF Datasheet/PDF |
Quantity: | 3200 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFP4227PBF is a single high-voltage N-Channel MOSFET from On Semiconductor. This device is designed specifically for high-current, low-impedance switching applications, and is suited for use in applications such as: DC/DC converters, switching relay drivers, and AC-DC applications. The IRFP4227PBF is designed for high-current and high-voltage switching, and can handle peak currents up to 230A and drain-to-source voltages up to 500 V. It also has a low on-state resistance of 0.02 ohms, making it well-suited for high-current applications.The IRFP4227PBF is an N-Channel MOSFET, which means that the gate terminal is connected to an n-type semiconductor material. N-Channel MOSFETs are usually used for switching applications, as they can be turned ON and OFF quickly by changing the voltage applied to the gate terminal. The gate terminal is essentially a control terminal, and when it is connected to a high voltage, the device turns ON and allows current to flow between the source and drain terminals. When the gate voltage is reduced to zero, the device turns OFF and no current can flow.In terms of its construction, the IRFP4227PBF uses a lateral MOSFET structure. This structure allows the device to be very efficient and to handle high currents. Other advantages of the lateral MOSFET structure are that power dissipation is improved, and the gate-source capacitance is minimized. Additionally, the device can be used in both linear and switching circuits.The IRFP4227PBF has a wide range of applications, as it is designed for high-current and high-voltage switching. It is commonly used in DC/DC converters, as it can switch between loads quickly and efficiently. It is also suited for use in switching relay applications, as well as powering the current control elements in AC-DC applications.The IRFP4227PBF is designed for use in high-current, low-impedance applications. It is able to handle peak currents of up to 230A, and drain-to-source voltages up to 500V. Its low on-state resistance of 0.02 ohms makes it ideal for high-current switching applications. It also has a wide range of temperature range and power dissipation capabilities, making it suitable for a variety of applications.To conclude, the IRFP4227PBF is a single high-voltage N-Channel MOSFET from On Semiconductor, designed specifically for high-current, low-impedance switching applications. It is well-suited for use in DC/DC converters, switching relay drivers, and AC-DC applications. It is able to handle peak currents of up to 230A, and has a low on-state resistance of 0.02 ohms. The device also has a wide range of temperature range and power dissipation capabilities, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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