IRFP4227PBF Allicdata Electronics
Allicdata Part #:

IRFP4227PBF-ND

Manufacturer Part#:

IRFP4227PBF

Price: $ 3.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 65A TO-247AC
More Detail: N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-...
DataSheet: IRFP4227PBF datasheetIRFP4227PBF Datasheet/PDF
Quantity: 3200
1 +: $ 3.37000
10 +: $ 3.26890
100 +: $ 3.20150
1000 +: $ 3.13410
10000 +: $ 3.03300
Stock 3200Can Ship Immediately
$ 3.37
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 25 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFP4227PBF is a single high-voltage N-Channel MOSFET from On Semiconductor. This device is designed specifically for high-current, low-impedance switching applications, and is suited for use in applications such as: DC/DC converters, switching relay drivers, and AC-DC applications. The IRFP4227PBF is designed for high-current and high-voltage switching, and can handle peak currents up to 230A and drain-to-source voltages up to 500 V. It also has a low on-state resistance of 0.02 ohms, making it well-suited for high-current applications.The IRFP4227PBF is an N-Channel MOSFET, which means that the gate terminal is connected to an n-type semiconductor material. N-Channel MOSFETs are usually used for switching applications, as they can be turned ON and OFF quickly by changing the voltage applied to the gate terminal. The gate terminal is essentially a control terminal, and when it is connected to a high voltage, the device turns ON and allows current to flow between the source and drain terminals. When the gate voltage is reduced to zero, the device turns OFF and no current can flow.In terms of its construction, the IRFP4227PBF uses a lateral MOSFET structure. This structure allows the device to be very efficient and to handle high currents. Other advantages of the lateral MOSFET structure are that power dissipation is improved, and the gate-source capacitance is minimized. Additionally, the device can be used in both linear and switching circuits.The IRFP4227PBF has a wide range of applications, as it is designed for high-current and high-voltage switching. It is commonly used in DC/DC converters, as it can switch between loads quickly and efficiently. It is also suited for use in switching relay applications, as well as powering the current control elements in AC-DC applications.The IRFP4227PBF is designed for use in high-current, low-impedance applications. It is able to handle peak currents of up to 230A, and drain-to-source voltages up to 500V. Its low on-state resistance of 0.02 ohms makes it ideal for high-current switching applications. It also has a wide range of temperature range and power dissipation capabilities, making it suitable for a variety of applications.To conclude, the IRFP4227PBF is a single high-voltage N-Channel MOSFET from On Semiconductor, designed specifically for high-current, low-impedance switching applications. It is well-suited for use in DC/DC converters, switching relay drivers, and AC-DC applications. It is able to handle peak currents of up to 230A, and has a low on-state resistance of 0.02 ohms. The device also has a wide range of temperature range and power dissipation capabilities, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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