IRFP360PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	280W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	210nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	200 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction
The IRFP360PBF is a high-current, capable N-channel Power MOSFET (PMOS) designed for use in power management applications. It is designed to have excellent R DS(ON) , low gate charge and low capacitance. This article will discuss the application field and working principle of the IRFP360PBF as well as other important specifications such as R DS(ON) , gate-source and drain capacitance.Application field
The IRFP360PBF is most commonly used in power management applications including load switching, OR-ing, level shifting and battery management in switch mode power supplies, high frequency circuits and power converters. It is suitable for voltage range of 15V to 100V, high current handling and low gate charge. The IRFP360PBF is also used in motor drives and other high current applications.Working principle
The IRFP360PBF is a high-current, capable N-channel Power MOSFET (PMOS). It consists of a substrate, gate, and drain regions, and operates in depletion mode. In this mode, the current flows through the source and drain regions when the gate-source voltage (V GS ) is below the threshold voltage (V TH ) and the channel is in the “off” state. When V GS becomes higher than V TH , the channel is in the “on” state and electrons are injected into the channel from the source. This causes a flow of current through the channel, from source to drain.R DS(ON)
R DS(ON) is the resistance between the source and drain when the MOSFET is in the “on” state. The IRFP360PBF has a low R DS(ON) , which allows for greater current handling capability and reduced power losses.Gate charge
Gate charge is the amount of charge required to change the state of the MOSFET from the “off” to “on” state. The IRFP360PBF has a low gate charge, which reduces switching times and minimizes losses during switching.Gate capacitance
Gate capacitance is the capacitance between the gate and the source of the PMOS. It determines the maximum frequency at which the MOSFET can be switched without causing circuit instability. The IRFP360PBF has a low gate capacitance, which reduces the effective parasitic capacitance and allows for faster switching speeds.Drain capacitance
Drain capacitance is the capacitance between the drain and the source of the PMOS. The IRFP360PBF has a low drain capacitance, which improves the signal integrity of the signal by reducing the amount of potential interference.Conclusion
The IRFP360PBF is a high-current, capable N-channel Power MOSFET (PMOS). It is designed to minimize power losses, minimize switching times and provide signal integrity. It is suitable for use in power management applications including load switching, OR-ing, level shifting and battery management in switch mode power supplies, high frequency circuits and power converters. The IRFP360PBF is also used in motor drives and other high current applications. It has excellent R DS(ON) , low gate charge and low capacitance.

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