IRFP4768PBF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	520W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10880pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	270nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	17.5 mOhm @ 56A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	93A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFP4768PBF is a N-Channel Mosfet(Metal Oxide Semiconductor Field Effect Transistor) that is designed to enhance performance in various applications and provide high-speed switching capabilities. It is manufactured by International Rectifier and is housed in a TO-247 package. This type of Mosfet can be used in a wide variety of applications ranging from motor controllers, lighting control and other high-frequency switching scenarios.The key features of the IRFP4768PBF Mosfet include a low on-resistance of 0002 Ω, a drain current rating of 40A, a maximum drain to source voltage of 100V, and a gate to source voltage of ± 20V. This device also operates at operating temperature ranges between -55℃ and 175℃. These device characteristics make it suitable for a variety of applications.The Mosfet performs its fundamental switching process in a very similar way to the Bipolar Junction Transistors, however there are some major differences. Primarily, the transistor serves as a two-terminal switch, while the Mosfet uses three terminals. Secondly, the BJT acts as a current-controlled switch, while the Mosfet is voltage-controlled switch.The working principle of the Mosfet is rooted in the concept of the electric field effect. Every Mosfet has a “channel” which is created between the drain and source terminal by a thin layer of conductive oxide material. This oxide layer is essential for gate control. When a positive voltage (VGS) is applied to the gate terminal in relation to the source terminal, an electric field is created in the oxide layer. The electric field repels existing carrier charges in the channel which creates a depletion region in the channel. The depletion region hinders current conduction between the drain and source terminal effectively “turns off” the Mosfet.By reversing the voltage polarity applied to the drain terminal, the electric field is able to reduce the thickness of the depletion region and allow current to flow between the source and drain terminal. In this way the Mosfet works as a voltage-controlled switch. Based on these properties, the IRFP4768PBF can be used to control motors, lighting, voltage regulators and other applications that require high speed switching capabilities.The major benefits of using Mosfets over other devices include the fact that they are extremely efficient in terms of power consumption, have low “on” resistance, are able to handle significant levels of current and can operate at very high frequencies. This makes them ideal for applications where size, power and speed are important criteria. The IRFP4768PBF has been designed to meet these criteria and will provide reliable performance in a wide variety of environments and applications.

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