IRFP450LCPBF Allicdata Electronics
Allicdata Part #:

IRFP450LCPBF-ND

Manufacturer Part#:

IRFP450LCPBF

Price: $ 5.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 14A TO-247AC
More Detail: N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: IRFP450LCPBF datasheetIRFP450LCPBF Datasheet/PDF
Quantity: 457
1 +: $ 5.13450
10 +: $ 4.62294
100 +: $ 3.80117
500 +: $ 3.18476
1000 +: $ 2.77382
Stock 457Can Ship Immediately
$ 5.65
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFP450LCPBF is a kind of Insulated-Gate Field-Effect Transistor (IGFET) with N Channel. Insulated-Gate Field-Effect Transistor (IGFET) is a unipolar transistor with its gate placed between source and drain terminals. It is short for Irectified Gate Field Effect Transistor and its basic structure is very similar to the JFET. An IGFET differs from a JFET in which the gate region is dielectrically insulated from the body material. By applying a negative voltage on the gate relative to the source, a depletion region will form around the gate, reducing the current from the source to the drain.

IRFP450LCPBF is a high voltage MOSFET with a drain-source breakdown voltage of 500V, a maximum drain current of 15A, and a maximum drain-source voltage of 500V. It is commonly used in a variety of application fields, such as high power switching, electronic motor control, DC-DC conversion, and power supply modulation.

The working principle of an IRFP450LCPBF is very simple and efficient.The device is designed to operate by the action of an electric field between the gate and the drain. When a positive gate potential is applied, the field attracts electrons from the drain and the current increases. When the positive gate potential is removed, the electrons are no longer attracted and the current stops.

In addition, due to its unique design, IRFP450LCPBF has some advantages over other kinds of transistors. First, it has a wide range of gate-source voltage and drain-source voltage, which makes it a highly efficient device for applications that require high voltages. Second, because of its high gate-source voltage, it can provide more stable current flow than other kinds of transistors. Finally, the device is highly reliable, offering a very long service life and is capable of handling large transient shock and vibration.

These features make an IRFP450LCPBF a very attractive option for a variety of applications. Its ability to handle high voltages, its reliability and its efficient current handling capabilities make it a great choice for applications that require large electrical power. Its wide range of gate-source voltage and drain-source voltage also make it suitable for applications that require precise regulation of current.

Overall, the IRFP450LCPBF is a very useful device for applications requiring high power switching and high voltage. It is simple to use and its versatile design makes it suitable for a wide range of applications. Additionally, its efficient current handling capabilities and long life make it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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