| Allicdata Part #: | IRFP4468PBF-ND |
| Manufacturer Part#: |
IRFP4468PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 195A TO-247AC |
| More Detail: | N-Channel 100V 195A (Tc) 520W (Tc) Through Hole TO... |
| DataSheet: |  IRFP4468PBF Datasheet/PDF |
| Quantity: | 3350 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 19860pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 540nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 180A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFP4468PBF is a high-power Field-Effect Transistor (FET). It is designed to operate in high voltage and high current conditions, making it an excellent device for a variety of power electronics and signal switching applications.
The IRFP4468PBF is an N-channel MOSFET designed to handle up to 58V at a maximum drain current of 16.8A. As such, this FET is well-suited for switching and signal control applications in automotive, industrial, and power electronics applications. With its wide operating temperature range and high-frequency performance, it is perfect for high-current switching.
The IRFP4468PBF uses MOS technology to control the current flow. This involves controlling the voltage across the MOSFET, which in turn can control the current allowed to flow. When the gate voltage is above the source voltage, the MOSFET is in an “on” state and current can flow freely. When the gate voltage is lower than the source voltage, the MOSFET is in an “off” state and no current can flow. This process allows the IRFP4468PBF to control a high current without having to use additional control circuitry.
The IRFP4468PBF also has an extremely low on-state resistance, allowing high-current switching with minimal losses. This also helps to maintain a high-efficiency system, meaning more efficient energy conversion and improved performance.
The IRFP4468PBF is a high-power Field-Effect Transistor (FET) designed to operate in high voltage and high current conditions. It is an excellent choice for a variety of applications in automotive, industrial, and power electronics. The MOS technology used in the IRFP4468PBF allows for efficient power control, while its low on-state resistance helps to ensure high-efficiency system performance.
The specific data is subject to PDF, and the above content is for reference
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