IRFP140PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	72nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	77 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	31A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFP140PBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) commonly used in power electronics applications. It belongs to a family of MOSFETs called ‘single gate insulated gate bipolar transistors’ (IGBTs). As a power MOSFET, IRFP140PBF has a number of advantages over other types of transistors such as high power efficiency, low on-resistance, improved switching speed, and a wide operating temperature range.The IRFP140PBF is designed primarily for use as a control component in switching power supplies, motor control applications, light dimmers, and other power control applications. It is usually used as a part of a larger system, such as a switching regulator, which includes an input power supply, a controller, a power switch, and other components. A common example of a system in which an IRFP140PBF is used is an Uninterruptible Power Supply (UPS), which is used to protect sensitive equipment from power outages.The IRFP140PBF is constructed from an N-channel enhancement type MOSFET. It has a drain-source voltage rating of 100V and a drain current rating of 30A. It is a fast switching device, capable of switching frequencies of up to 1MHz. It can be used in both linear and switching applications. The IRFP140PBF also has a low on-resistance, which reduces the amount of power lost when the device is on, and reduces power dissipation.The working principle of the IRFP140PBF is based on the concept of Field Effect Transistor (FET). As with any FET, the IRFP140PBF works by controlling the flow of current between its source and drain terminals. As the gate voltage is increased, the ‘channel’ between the source and drain becomes more conductive and current can flow. When the gate voltage is decreased the channel is less conductive and the current flow is reduced.To summarize, the IRFP140PBF is a fast-switching, high-power MOSFET suitable for use in switching power supplies, motor control applications, light dimmers, and other power control applications. The device is constructed from an N-channel enhancement type MOSFET, with a drain-source voltage rating of 100V and a drain current rating of 30A. The working principle of the device is based on the FET concept, whereby the gate voltage controls the flow of current between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description