IRFP2907PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	470W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	620nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 125A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	209A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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Introduction

The IRFP2907PBF is a field effect transistor (FET) designed specifically for power management applications. It is a single-channel N-Channel enhancement mode MOSFET transistor with a very low input capacitance and a very low on-state resistance. It is designed to be used in circuits where an optimum balance between drive current, VDSS, RDS(on), and input capacitance is needed.

Application Field

The IRFP2907PBF is a highly efficient power management tool for applications that involve heavy load currentsand very low source resistance. It can be used in high-speed switching applications such as high-frequency switching, motor control, and IGBT or power MOSFET control. It is suitable for switching applications on 3.3V and 5V circuits, providing fast switching times and low power consumption.The IRFP2907PBF is widely used in output stages of switching power supplies, as it is capable of handling high load currents with low VDSS and low RDS(on). It is also suitable for applications such as switching power supplies, low power microcontrollers, DC-DC converters, motor control circuits and AC-DC converters.

Working Principle

The IRFP2907PBF is a single-channel N-channel enhancement mode MOSFET transistor. The MOSFET is operated by applying a small voltage on the Gate terminal with respect to the Drain terminal. When positive voltage is applied to the Gate terminal, the voltage of the Drain terminal will rise exponentially with respect to the voltage of the Gate terminal, providing a very fast switching action. When no bias voltage is applied to the Gate, the MOSFET remains in an off-state, with the output voltage at a low level. When the Gate bias is set at a negative potential, the MOSFET will switch to the on-state, allowing current to flow through the Drain and Source terminals. The IRFP2907PBF is designed with a very low input capacitance and on-state resistance, allowing it to operate without generating too much heat. This design also makes it suitable for switching applications where high switching frequencies are needed.

Conclusion

The IRFP2907PBF is a highly efficient power management tool that is suitable for high-speed switching applications. It has a very low input capacitance and on-state resistance, allowing it to be used for applications that require high switching frequency and low power consumption. This makes it a great choice for switching power supplies, low power microcontrollers, DC-DC converters, motor control circuits, and AC-DC converters.

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