Allicdata Part #: | IRFP340PBF-ND |
Manufacturer Part#: |
IRFP340PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 11A TO-247AC |
More Detail: | N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | IRFP340PBF Datasheet/PDF |
Quantity: | 468 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFP340PBF is a single-channel MOSFET which is widely used in a variety of field-effect transistors (FET) applications. FETs are electronic devices used to control the flow of electricity in electronic circuits. Unlike traditional transistors, FETs use an electric field to control the current flow, which allows them to effectively operate at lesser power levels. This makes them particularly useful for high-frequency applications. The IRFP340PBF is part of the International Rectifier (IR) series, which are rated for a drain current of over 340 Amps, making them suitable for a number of practical applications.
The IRFP340PBF FET is primarily used in power electronics applications such as inverters, switching regulators, power factor correction and motor control. The device features an integrated pre-biased ESD protection, which protects the device and its surrounding components from ESD damage. Aside from this, the IRFP340PBF features an extended drain-source breakdown voltage of over 100V and a maximum channel temperature rise of 1.7°C/W. This makes it suitable for applications where large voltage levels, high current switching, and heat dissipation are of concern.
The IRFP340PBF MOSFET works by taking an input voltage at the Gate, which creates an electric field between the Gate and Drain. This electric field is responsible for controlling the flow of current from the source, through the FET and out to the drain. The voltage drop across the FET corresponds to the amount of current that flows, allowing the FET to act as a switch or amplifier. The FET has an effective switching speed, a relatively low on-resistance and a low capacitance, making it ideal for high speed switching applications.
When using the IRFP340PBF, some key considerations need to be taken into account. The Gate voltage needs to be below the recommended level, since excess current can result in heat build-up and thermal runaway, potentially damaging the FET. It is also important to take thermal design constraints into account, as the FET can require substantial cooling. The IRFP340PBF is also sensitive to electrostatic discharge, so the use of suitable protective equipment is necessary when handling the device.
In conclusion, the IRFP340PBF is a versatile single-channel FET, which is suitable for a wide range of applications, such as power electronics, inverters, switching regulators and motor control. It features an extended drain-source breakdown voltage and a maximum channel temperature rise of 1.7°C/W, making it suitable for high voltage, high current switching and heat dissipation. When using the FET, it is important to adhere to the recommended Gate voltage and consider thermal design constraints.
The specific data is subject to PDF, and the above content is for reference
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